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1N5401

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size44KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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1N5401 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5401 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage100 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
1N5400 THRU 1N5408
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-201AD
Forward Current -
3.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Construction utilizes void-free molded plastic technique
3.0 Ampere operation at
T
L
=105°C with no thermal runaway
Typical I
R
less than 0.1µA
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.1 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N
5400
1N
5401
1N
5402
1N
5403
1N
5404
1N
5405
1N
5406
1N
5407
1N
5408
UNITS
*Maximum repetitive peak reverse voltage
*Maximum RMS voltage
*Maximum DC blocking voltage to T
A
=150°C
*Maximum average forward rectified current
0.5” (12.5mm) lead length at T
L
=105°C
*Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at T
L
=105°C
*Maximum instantaneous forward voltage at 3.0A
*Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=150°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
500
350
500
600
420
600
800 1000 Volts
560
700
Volts
800 1000 Volts
Amps
I
FSM
V
F
I
R
I
R(AV)
C
J
R
ΘJA
T
A
T
J
T
STG
200.0
1.2
10.0
500.0
500.0
30.0
20.0
+150
-50 to +170
-50 to +170
Amps
Volts
µA
µA
pF
°C/W
°C
°C
°C
*Maximum full load reverse current full cycle
average, 0.5" (12.5mm) lead length at T
L
=105°C
Typical junction capacitance
(NOTE 1)
*Typical thermal resistance
(NOTE 2)
Maximum DC blocking voltage temperature
*Operating junction temperature range
*Storage temperature range
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted with 0.8 x 0.8” (20 x 20mm) copper heatsinks
*JEDEC registered value
4/98

1N5401 Related Products

1N5401 1N5400 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 - 2 - 2 - -
Number of components 1 1 1 - 1 - 1 - -
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 - GREEN, PLASTIC PACKAGE-2 - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN - -
state ACTIVE ACTIVE DISCONTINUED - ACTIVE - DISCONTINUED - CONSULT MFR
packaging shape round round round - round - round - -
Package Size LONG FORM LONG FORM LONG FORM - LONG FORM - LONG FORM - -
Terminal form Wire Wire Wire - Wire - Wire - -
terminal coating tin MATTE Tin tin lead - PURE Tin - MATTE Tin - -
Terminal location AXIAL AXIAL AXIAL - AXIAL - AXIAL - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy - Plastic/Epoxy - -
structure single single single - single - single - -
Shell connection isolation isolation isolation - isolation - isolation - -
Diode component materials silicon silicon silicon - silicon - silicon - -
Diode type rectifier diode rectifier diode rectifier diode - rectifier diode - rectifier diode - rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - EFFICIENCY - GENERAL PURPOSE - -
Phase 1 1 1 - 1 - 1 - -
Maximum repetitive peak reverse voltage 100 V 50 V 200 V - 400 V - 600 V - -
Maximum average forward current 3 A 3 A 3 A - 3 A - 3 A - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A - 200 A - 200 A - -
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