XP6112 datasheet, PDF - EEWORLD Datasheet

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XP6112: DescriptionComposite Device - Composite Transistors; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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XP6112 Overview

Composite Device - Composite Transistors

XP6112 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
Parts packaging code	SC-88
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

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Composite Transistors

XP6112

Silicon PNP epitaxial planer transistor

Unit: mm

0.425

1.25±0.1

0.425

0.2±0.05

For switching/digital circuits

2.1±0.1

0.65

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

2.0±0.1

Features

0.65

0.2

0.9±0.1

Basic Part Number of Element

0 to 0.1

UN1112

2 elements

1 : Emitter (Tr1)

2 : Emitter (Tr2)

3 : Base (Tr2)

0.7±0.1

0.2±0.1

Absolute Maximum Ratings

Parameter

Collector to base voltage

Rating

Collector to emitter voltage

element Collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

(Ta=25˚C)

Ratings

–50

–100

150

–55 to +150

Unit

˚C

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Collector (Tr1)

EIAJ : SC–88

S–Mini Type Package (6–pin)

Marking Symbol:

Internal Connection

Tr1

Tr2

Electrical Characteristics

Parameter

Collector to base voltage

Collector to emitter voltage

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Forward current transfer h

ratio

Collector to emitter saturation voltage

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

Resistance ratio

(Ta=25˚C)

Symbol

CBO

CEO

CBO

CEO

EBO

(small/large)

CE(sat)

Conditions

= –10µA, I

= 0

= –2mA, I

= 0

= –50V, I

= 0

= –50V, I

= 0

= –6V, I

= 0

= –10V, I

= –5mA

= –10V, I

= –5mA

= –10mA, I

= – 0.3mA

= –5V, V

= – 0.5V, R

= 1kΩ

= –5V, V

= –2.5V, R

= 1kΩ

= –10V, I

= 1mA, f = 200MHz

–30%

0.8

1.0

+30%

1.2

–4.9

– 0.2

0.5

0.99

– 0.25

MHz

kΩ

min

–50

– 0.1

– 0.5

– 0.2

typ

max

Unit

µA

Ratio between 2 elements

0.12

–0.02

+0.05

XP6112 Related Products

	XP6112	XP1119
Description	Composite Device - Composite Transistors	Composite Device - Composite Transistors
Is it Rohs certified?	conform to	conform to
Maker	Panasonic	Panasonic
Parts packaging code	SC-88	SC-88A
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G5
Contacts	6	5
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60	30
JESD-30 code	R-PDSO-G6	R-PDSO-G5
Number of components	2	2
Number of terminals	6	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz

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