MXLPLAD30KP350CAE3 datasheet, PDF

MXLPLAD30KP350CAE3: DescriptionTVS DIODE 350V 564V PLAD; CategoryDiscrete semiconductor diode; File Size415KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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TVS DIODE 350V 564V PLAD

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-1
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	431 V
Minimum breakdown voltage	389 V
Breakdown voltage nominal value	410 V
Shell connection	CATHODE
Maximum clamping voltage	564 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PSSO-G1
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	1
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	350 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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