IC DRAM 4G PARALLEL 96FBGA
| Parameter Name | Attribute value |
| memory type | Volatile |
| memory format | DRAM |
| technology | SDRAM - DDR3L |
| storage | 4Gb （256M x 16） |
| Clock frequency | 933MHz |
| Write cycle time - words, pages | - |
| interview time | 20ns |
| memory interface | in parallel |
| Voltage - Power | 1.283 V ~ 1.45 V |
| Operating temperature | -40°C ~ 95°C（TC） |
| Installation type | surface mount |
| Package/casing | 96-TFBGA |
| Supplier device packaging | 96-FBGA（8x14） |
| MT41K256M16TW-107 XIT:P | MT41K512M8DA-107 XIT:P | MT41K256M16TW-107 XIT:P TR | MT41K512M8DA-107 XIT:P TR | MT41K256M16TW-107XIT:P | |
|---|---|---|---|---|---|
| Description | IC DRAM 4G PARALLEL 96FBGA | IC DRAM 4G PARALLEL 78FBGA | IC DRAM 4G PARALLEL 96FBGA | IC DRAM 4G PARALLEL 78FBGA | DDR DRAM, 256MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 |
| technology | SDRAM - DDR3L | SDRAM - DDR3L | SDRAM - DDR3L | SDRAM - DDR3L | CMOS |
| memory type | Volatile | Volatile | Volatile | Volatile | - |
| memory format | DRAM | DRAM | DRAM | DRAM | - |
| storage | 4Gb （256M x 16） | 4Gb （512M x 8） | 4Gb （256M x 16） | 4Gb （512M x 8） | - |
| Clock frequency | 933MHz | 933MHz | 933MHz | 933MHz | - |
| interview time | 20ns | 20ns | 20ns | 20ns | - |
| memory interface | in parallel | in parallel | in parallel | in parallel | - |
| Voltage - Power | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | - |
| Operating temperature | -40°C ~ 95°C（TC） | -40°C ~ 95°C（TC） | -40°C ~ 95°C（TC） | -40°C ~ 95°C（TC） | - |
| Installation type | surface mount | surface mount | surface mount | surface mount | - |
| Package/casing | 96-TFBGA | 78-TFBGA | 96-TFBGA | 78-TFBGA | - |
| Supplier device packaging | 96-FBGA（8x14） | 78-FBGA（8x10.5） | 96-FBGA（8x14） | 78-FBGA（8x10.5） | - |
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