IC DRAM 4G PARALLEL 78FBGA
Parameter Name | Attribute value |
memory type | Volatile |
memory format | DRAM |
technology | SDRAM - DDR3L |
storage | 4Gb (512M x 8) |
Clock frequency | 933MHz |
Write cycle time - words, pages | - |
interview time | 20ns |
memory interface | in parallel |
Voltage - Power | 1.283 V ~ 1.45 V |
Operating temperature | -40°C ~ 95°C(TC) |
Installation type | surface mount |
Package/casing | 78-TFBGA |
Supplier device packaging | 78-FBGA(8x10.5) |
MT41K512M8DA-107 XIT:P | MT41K256M16TW-107 XIT:P | MT41K256M16TW-107 XIT:P TR | MT41K512M8DA-107 XIT:P TR | MT41K256M16TW-107XIT:P | |
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Description | IC DRAM 4G PARALLEL 78FBGA | IC DRAM 4G PARALLEL 96FBGA | IC DRAM 4G PARALLEL 96FBGA | IC DRAM 4G PARALLEL 78FBGA | DDR DRAM, 256MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 |
technology | SDRAM - DDR3L | SDRAM - DDR3L | SDRAM - DDR3L | SDRAM - DDR3L | CMOS |
memory type | Volatile | Volatile | Volatile | Volatile | - |
memory format | DRAM | DRAM | DRAM | DRAM | - |
storage | 4Gb (512M x 8) | 4Gb (256M x 16) | 4Gb (256M x 16) | 4Gb (512M x 8) | - |
Clock frequency | 933MHz | 933MHz | 933MHz | 933MHz | - |
interview time | 20ns | 20ns | 20ns | 20ns | - |
memory interface | in parallel | in parallel | in parallel | in parallel | - |
Voltage - Power | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | 1.283 V ~ 1.45 V | - |
Operating temperature | -40°C ~ 95°C(TC) | -40°C ~ 95°C(TC) | -40°C ~ 95°C(TC) | -40°C ~ 95°C(TC) | - |
Installation type | surface mount | surface mount | surface mount | surface mount | - |
Package/casing | 78-TFBGA | 96-TFBGA | 96-TFBGA | 78-TFBGA | - |
Supplier device packaging | 78-FBGA(8x10.5) | 96-FBGA(8x14) | 96-FBGA(8x14) | 78-FBGA(8x10.5) | - |