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MV1N8175

Description
TVS DIODE
CategoryCircuit protection   
File Size377KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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TVS DIODE

1N8149 – 1N8182
Voidless-Hermetically-Sealed Unidirectional 150 W
Low-Capacitance Transient Voltage Suppressors
DESCRIPTION
This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor
(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where
a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from
the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak
“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability
applications. These devices are also available in axial leaded packages for thru-hole mounting.
Available
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High surge current and peak pulse power unidirectional protection for sensitive circuits.
Very low capacitance for high frequency or high baud rate applications.
Bidirectional capability with two devices in anti-parallel (see Figure 5).
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
RoHS compliant versions are available.
“A” Package
Also available in:
“A” MELF package
(surface mount)
1N8149US – 1N8182US
APPLICATIONS / BENEFITS
High reliability transient protection.
Extremely robust construction.
Working peak “standoff” voltage (V
WM
) from 6.8 to 170 volts.
Available as 150 W peak pulse power (P
PP
) at 10/1000 µs.
Lowest available capacitance for 150 W rated TVS.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Secondary lightning protection per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Capacitance at zero volts
Thermal Resistance junction to ambient
o
Peak Pulse Power at 25
C (10µs/1000µs)
Impulse repetition rate (duty factor)
o
Steady State (Average) Power @ T
A
= 25 C
Solder Temperature (10 s maximum)
Symbol
T
J
and T
STG
C
R
θJA
P
PP
d.f
P
M(AV)
Value
-55 to +175
4
150
150
0.01
1.0
260
Unit
C
pF
o
C/W
W
%
W
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Note:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
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