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MA3X152A0L

Description
DIODE GEN PURP 80V 100MA MINI3
Categorysemiconductor    Discrete semiconductor   
File Size253KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA3X152A0L Overview

DIODE GEN PURP 80V 100MA MINI3

MA3X152A0L Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)80V
Current - average rectification (Io)100mA(DC)
Voltage at different If - Forward (Vf1.2V @ 100mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)3ns
Current at different Vr - Reverse leakage current100nA @ 75V
Capacitance at different Vr, F2pF @ 0V,1MHz
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingMini 3-G1
Operating Temperature - Junction150°C (maximum)

MA3X152A0L Related Products

MA3X152A0L MA3X152K0L
Description DIODE GEN PURP 80V 100MA MINI3 DIODE GEN PURP 80V 100MA MINI3
Diode type standard standard
Voltage - DC Reverse (Vr) (Maximum) 80V 80V
Current - average rectification (Io) 100mA(DC) 100mA(DC)
Voltage at different If - Forward (Vf 1.2V @ 100mA 1.2V @ 100mA
speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed
Reverse recovery time (trr) 3ns 3ns
Current at different Vr - Reverse leakage current 100nA @ 75V 100nA @ 75V
Capacitance at different Vr, F 2pF @ 0V,1MHz 2pF @ 0V,1MHz
Installation type surface mount surface mount
Package/casing TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
Supplier device packaging Mini 3-G1 Mini 3-G1
Operating Temperature - Junction 150°C (maximum) 150°C (maximum)
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