MA3X152K0L datasheet, PDF - EEWORLD Datasheet

MA3X152K0L: DescriptionDIODE GEN PURP 80V 100MA MINI3; Categorysemiconductor Discrete semiconductor; File Size253KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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MA3X152K0L Overview

DIODE GEN PURP 80V 100MA MINI3

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	80V
Current - average rectification (Io)	100mA（DC）
Voltage at different If - Forward (Vf	1.2V @ 100mA
speed	Small signal =< 200mA (Io), any speed
Reverse recovery time (trr)	3ns
Current at different Vr - Reverse leakage current	100nA @ 75V
Capacitance at different Vr, F	2pF @ 0V，1MHz
Installation type	surface mount
Package/casing	TO-236-3，SC-59，SOT-23-3
Supplier device packaging	Mini 3-G1
Operating Temperature - Junction	150°C (maximum)

	MA3X152K0L	MA3X152A0L
Description	DIODE GEN PURP 80V 100MA MINI3	DIODE GEN PURP 80V 100MA MINI3
Diode type	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	80V	80V
Current - average rectification (Io)	100mA（DC）	100mA（DC）
Voltage at different If - Forward (Vf	1.2V @ 100mA	1.2V @ 100mA
speed	Small signal =< 200mA (Io), any speed	Small signal =< 200mA (Io), any speed
Reverse recovery time (trr)	3ns	3ns
Current at different Vr - Reverse leakage current	100nA @ 75V	100nA @ 75V
Capacitance at different Vr, F	2pF @ 0V，1MHz	2pF @ 0V，1MHz
Installation type	surface mount	surface mount
Package/casing	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3
Supplier device packaging	Mini 3-G1	Mini 3-G1
Operating Temperature - Junction	150°C (maximum)	150°C (maximum)

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