MUR1020FCT datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MUR1020FCT

Preview

MUR1020FCT: DescriptionUltra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes; CategoryDiscrete semiconductor; File Size99KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

Download Datasheet Parametric View All

MUR1020FCT Overview

Ultra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes

Features

Product Name: Ultra-Fast Recovery Rectifier Diodes

Product model: MUR1020FCT

product features:

Io: 10.0A

VRRM: 100V-600V

Glass passivated chip

High forward surge current capability

High surge forward current capability

use:

Fast rectifier

High speed switching

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 200V

Average Forward Current IF(AV) Average forward current: 10A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 55A

Current Squared Time I^2*t The integral value of the square of the forward surge current and the current surge duration: 12 A^2*S

Junction Temperature TJ Junction temperature: -55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +175 ℃

Peak Forward Voltage (IFM=5.0A) VFM Forward peak voltage: 0.95V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA

IRRM2 (Ta=125℃) Reverse peak current: 500μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-C Thermal Resistance (Typical): 2.0 ℃/W

Package: ITO-220AB

MUR1020FCT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
ECCN code	EAR99
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
Maximum non-repetitive peak forward current	55 A
Maximum operating temperature	175 °C
Maximum output current	10 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.035 µs
surface mount	NO
Base Number Matches	1

MUR1020FCT Preview

Download Datasheet

View All

MUR1010FCT THRU MUR1060FCT

超快恢复整流二极管

Ultra-Fast Recovery Rectifier Diodes

■特征

●

Features

■外½尺寸和印记

Outline Dimensions and Mark

10.0A

●

RRM

100V~600V

●

玻璃钝化芯片

Glass passivated chip

●

ITO-220AB

.406(10.3)

MAX

.112(2.85)

.100(2.55)

.134(3.4)

.113(3.0)

耐正向浪涌电流½力高

High surge forward current capability

DIA

.124(3.16)

MAX

.185(4.7)

MAX

.606(15.5)

.583(14.8)

.161(4.1)

MAX

PIN1 2

■用途

Applications

●

.110(2.8)

.098(2.5)

快速整流用

High speed switching

.55(1.4)

MAX

.035(0.9)

MAX

.100(2.55)

.087(2.20)

.543(13.8)

.512(13.2)

.100(2.55)

.087(2.20)

.030(0.76)

MAX

PIN1

PIN2

PIN3

CASE

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

平均整流输出电流

Average Rectified Output Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward Current

正向浪涌电流的平方对电流浪涌持续

时间的积分值

Current Squared Time

贮存温度

Storage Temperature

结温

Junction Temperature

Dimensions in inches and (millimeters)

符号单½

Symbol Unit

RRM

FSM

条件

Conditions

MUR-FCT

1010

100

1015

150

1020

200

1040

400

1060

600

60H

正弦波，电阻负½½，T

=25℃

60H

sine wave, R- load, T

=25℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t＜8.3ms T

=25℃,单个二

极管

1ms

≤

＜8.3ms

=25℃,Rating of

per diode

stg

℃

-55 ~ +150

-55 ~ +175

■电特性

（T

=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

反向恢复时间

Reverse Recovery Time

热阻

Thermal Resistance

符号

Symbol

RRM1

RRM2

Trr

J-C

单½

Unit

μA

测试条件

Test Condition

I FM =5.0A

Ta=25℃

Ta=125℃

=0.5A I

=1A

=0.25A

MUR-FCT

1010

1015

0.95

500

1020 1040 1060

1.25

1.7

RRM

℃/W

结和壳之间

Between junction and case

2.0

Document Number 0164

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Recommended Resources

Power circuit of LBO-522 dual trace oscilloscope

Op amp driven power amplifier circuit

First-order active phase-shift oscillator circuit diagram

Triac AC voltage regulator circuit

Nickel-cadmium battery automatic charger circuit diagram

Verbal help box circuit for patient who has fainted

Working hours of heart rate bracelet: Working hours of heart rate braceletThe battery capacity of this kind of smart bracelet that can monitor heart rate and even blood pressure in real time is generally less than 100mAh. Some products ca...; QWE4562009 Test/Measurement

[GD32L233C] + 1. Unboxing & Development Environment Setup: [i=s]This post was last edited by chrisrh on 2022-1-4 17:59[/i]1. Unboxing I communicated and placed an order on TMALL on the afternoon of December 31, 2021 and applied for the board. It was delivered...; chrisrh GD32 MCU

What is it like to run high-speed lines on the signal layer of ultra-thick copper?: Author: Huang Gang, member of Yibo Technology Expressway MediaAccording to normal thinking logic, the routing layer of high-speed signals is generally 0.5oz or 1oz. If you see a high-speed signal on t...; yvonneGan PCB Design

ADC conversion method and main parameters: ADCADC is the English abbreviation of analog-to-digital converter, which is an electronic component that can convert analog signals into digital signals. Usually, the signal is sampled and held, and t...; Jacktang Analogue and Mixed Signal

GaN: Key Technologies for Solving 5G Challenges: This year is the first year of 5G, so this year we have officially entered the 5G era. Compared with 4G, 5G has a higher frequency, so in order to achieve the same network coverage, the number of 5G b...; alan000345 RF/Wirelessly

MicroPython driver porting for LIS2DW12 motion sensor: The LIS2DW12 is a low-power three-axis acceleration (motion) sensor that supports multiple operating modes and can be used for:Motion Detection for Wearable Devices Gesture recognition and games Motio...; dcexpert MEMS sensors

Popular Components