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RN2130MFV,L3F

Description
X34 PB-F VESM TRANSISTOR PD 150M
Categorysemiconductor    Discrete semiconductor   
File Size168KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN2130MFV,L3F Overview

X34 PB-F VESM TRANSISTOR PD 150M

RN2130MFV,L3F Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,5mA
Current - collector cutoff (maximum)100nA(ICBO)
Power - Max150mW
Installation typesurface mount
Package/casingSOT-723
Supplier device packagingVESM
RN2130MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2130MFV
0.22±0.05
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
1.2±0.05
0.8±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.32±0.05
Complementary to RN1130MFV
0.4
0.4
1
2
3
Equivalent Circuit
0.5±0.05
VESM
JEDEC
1.BASE
2.EMITTER
3.COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−50
−50
−10
−100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight : 1.5 mg (typ.)
Note1: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Example
0.5
0.45
Unit: mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-04
1
2014-03-01
0.13±0.05

RN2130MFV,L3F Related Products

RN2130MFV,L3F RN2130MFV(TL3PAV) RN2130MFV(TL3SONY)
Description X34 PB-F VESM TRANSISTOR PD 150M Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
package instruction - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code - unknown unknown
Other features - BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 100 100
JESD-30 code - R-PDSO-F3 R-PDSO-F3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP
surface mount - YES YES
Terminal form - FLAT FLAT
Terminal location - DUAL DUAL
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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