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RN2130MFV(TL3PAV)

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size168KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2130MFV(TL3PAV) Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2130MFV(TL3PAV) Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
RN2130MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2130MFV
0.22±0.05
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
1.2±0.05
0.8±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.32±0.05
Complementary to RN1130MFV
0.4
0.4
1
2
3
Equivalent Circuit
0.5±0.05
VESM
JEDEC
1.BASE
2.EMITTER
3.COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−50
−50
−10
−100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight : 1.5 mg (typ.)
Note1: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Example
0.5
0.45
Unit: mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-04
1
2014-03-01
0.13±0.05

RN2130MFV(TL3PAV) Related Products

RN2130MFV(TL3PAV) RN2130MFV,L3F RN2130MFV(TL3SONY)
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon X34 PB-F VESM TRANSISTOR PD 150M Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
package instruction SMALL OUTLINE, R-PDSO-F3 - SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code unknown - unknown
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 - BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 - 100
JESD-30 code R-PDSO-F3 - R-PDSO-F3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type PNP - PNP
surface mount YES - YES
Terminal form FLAT - FLAT
Terminal location DUAL - DUAL
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1

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