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FQD3N50CTF

Description
MOSFET N-CH 500V 2.5A DPAK
Categorysemiconductor    Discrete semiconductor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQD3N50CTF Overview

MOSFET N-CH 500V 2.5A DPAK

FQD3N50CTF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)500V
Current - Continuous Drain (Id) at 25°C2.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs2.5 ohms @ 1.25A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)13nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)365pF @ 25V
FET function-
Power dissipation (maximum)35W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63

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