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IRLR3715TRPBF

Description
MOSFET N-CH 20V 54A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size270KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRLR3715TRPBF Overview

MOSFET N-CH 20V 54A DPAK

IRLR3715TRPBF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C54A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs14 milliohms @ 26A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)17nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1060pF @ 10V
FET function-
Power dissipation (maximum)3.8W(Ta),71W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
PD - 95555A
SMPS MOSFET
IRLR3715PbF
IRLU3715PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
V
DSS
20V
R
DS(on)
max
14mΩ
I
D
54A
D-Pak
IRLR3715
I-Pak
IRLU3715
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
Maximum Power Dissipation
…
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
54
„
38
„
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
…
Typ.
–––
–––
–––
Max.
2.1
110
50
Units
°C/W
Notes

through
…
are on page 10
www.irf.com
1
12/6/04

IRLR3715TRPBF Related Products

IRLR3715TRPBF
Description MOSFET N-CH 20V 54A DPAK
FET type N channel
technology MOSFET (metal oxide)
Drain-source voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 54A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V
Rds On (maximum value) when different Id, Vgs 14 milliohms @ 26A, 10V
Vgs (th) (maximum value) when different Id 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 17nC @ 4.5V
Vgs (maximum value) ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1060pF @ 10V
Power dissipation (maximum) 3.8W(Ta),71W(Tc)
Operating temperature -55°C ~ 175°C(TJ)
Installation type surface mount
Supplier device packaging D-Pak
Package/casing TO-252-3, DPak (2 leads + tab), SC-63
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