BSS316NL6327HTSA1 datasheet, PDF

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BSS316NL6327HTSA1: DescriptionMOSFET N-CH 30V 1.4A SOT-23; Categorysemiconductor Discrete semiconductor; File Size569KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS316NL6327HTSA1 Overview

MOSFET N-CH 30V 1.4A SOT-23

BSS316NL6327HTSA1 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	1.4A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	160 milliohms @ 1.4A, 10V
Vgs (th) (maximum value) when different Id	2V @ 3.7µA
Gate charge (Qg) at different Vgs (maximum value)	.6nC @ 5V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	94pF @ 15V
FET function	-
Power dissipation (maximum)	500mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	SOT-23-3
Package/casing	TO-236-3，SC-59，SOT-23-3

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BSS316NL6327HTSA1 Related Products

	BSS316NL6327HTSA1	BSS316N L6327	BSS316NL6327
Description	MOSFET N-CH 30V 1.4A SOT-23	mosfet N-CH 30v 1.4A sot-23	Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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