BSS316NL6327 datasheet, PDF - EEWORLD Datasheet

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BSS316NL6327: DescriptionSmall Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size569KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS316NL6327 Overview

Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS316NL6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	1.4 A
Maximum drain current (ID)	1.4 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

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BSS316NL6327 Related Products

	BSS316NL6327	BSS316N L6327	BSS316NL6327HTSA1
Description	Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	mosfet N-CH 30v 1.4A sot-23	MOSFET N-CH 30V 1.4A SOT-23

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