IDFW40E65D1E
EmitterControlledDiodeRapid1AdvancedIsolation
Rapidswitchingemittercontrolleddiodeinfullyisolatedpackage
Features:
•650VEmitterControlledtechnology
•Temperaturestablebehaviorofkeyparameters
•Lowforwardvoltage(V
F
)
•Lowreverserecoverycharge(Q
rr
)
•Lowreverserecoverycurrent(I
rrm
)
•Softnessfactor>1
•Maximumjunctiontemperature175°C
•2500V
RMS
electricalisolation,50/60Hz,t=1min
•100%testedisolatedmountingsurface
•Pb-freeleadplating;RoHScompliant
PotentialApplications:
•AirConditioningPFC
•GeneralPurposeDrives(GPD)
Packagepindefinition:
•Pin1-notconnected
•Pin2-cathode
•Pin3-anode
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
Fully isolated package TO-247
A
C
KeyPerformanceandPackageParameters
Type
IDFW40E65D1E
V
rrm
650V
I
f
40A
V
f
,T
vj
=25°C
1.7V
T
vjmax
175°C
Marking
D40E65D1E
Package
PG-TO247-3-AI
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.2
2017-10-27
IDFW40E65D1E
EmitterControlledDiodeRapid1AdvancedIsolation
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Datasheet
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IDFW40E65D1E
EmitterControlledDiodeRapid1AdvancedIsolation
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Repetitivepeakreversevoltage,T
vj
≥25°C
Diodeforwardcurrent,limitedbyT
vjmax
T
h
=25°C
T
h
=65°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
PowerdissipationT
h
=25°C
PowerdissipationT
h
=65°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationvoltageRMS,f=50/60Hz,t=1min
1)
ThermalResistance
Parameter
R
th
Characteristics
Diode thermal resistance,
2)
junction - heatsink
Thermal resistance
junction - ambient
R
th(j-h)
R
th(j-a)
Symbol Conditions
Symbol
V
RRM
I
F
I
Fpuls
P
tot
T
vj
T
stg
Value
650
42.0
35.0
120.0
78.0
57.0
-40...+175
-55...+150
260
Unit
V
A
A
W
°C
°C
°C
Nm
V
M
V
isol
0.6
2500
Value
min.
typ.
max.
Unit
-
-
1.75
-
1.92
65
K/W
K/W
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Diode forward voltage
V
F
I
F
=40.0A
T
vj
=25°C
T
vj
=175°C
V
R
=650V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
1.70
1.75
-
350
2.10
-
40
-
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Reverse leakage current
I
R
µA
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
-
13.0
-
nH
Symbol Conditions
Value
min.
typ.
max.
Unit
1)
2)
For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
At force on body F = 500N, T
a
= 25ºC
Datasheet
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IDFW40E65D1E
EmitterControlledDiodeRapid1AdvancedIsolation
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=40.0A,
di
F
/dt=1000A/µs,
Lσ=75nH,
Cσ=30pF,
Switch IKFW50N60DH3
T
vj
=25°C,
V
R
=400V,
I
F
=40.0A,
di
F
/dt=300A/µs,
Lσ=75nH,
Cσ=30pF,
Switch IKFW50N60DH3
-
-
-
-
76
0.57
11.0
-885
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
232
0.52
6.0
-130
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=40.0A,
di
F
/dt=1000A/µs,
Lσ=75nH,
Cσ=30pF,
Switch IKFW50N60DH3
T
vj
=175°C,
V
R
=400V,
I
F
=40.0A,
di
F
/dt=300A/µs,
Lσ=75nH,
Cσ=30pF,
Switch IKFW50N60DH3
-
-
-
-
106
1.51
20.0
-760
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
228
1.33
9.8
-160
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
Datasheet
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IDFW40E65D1E
EmitterControlledDiodeRapid1AdvancedIsolation
80
45
40
35
70
P
tot
,POWERDISSIPATION[W]
60
I
F
,FORWARDCURRENT[A]
25
50
75
100
125
150
175
30
25
20
15
10
5
0
50
40
30
20
10
0
25
50
75
100
125
150
175
T
h
,HEATSINKTEMPERATURE[°C]
Figure 1.
Powerdissipationasafunctionofheatsink
temperature
(T
j
≤175°C)
T
h
,HEATSINKTEMPERATURE[°C]
Figure 2.
Diodeforwardcurrentasafunctionof
heatsinktemperature
300
T
vj
= 25°C, I
F
= 40A
T
vj
= 175°C, I
F
= 40A
Z
th(j
-
h)
,TRANSIENTTHERMALIMPEDANCE[K/W]
1
250
0.2
0.1
0.05
t
rr
,REVERSERECOVERYTIME[ns]
10
D = 0.5
200
0.1
0.02
0.01
single pulse
150
100
0.01
50
i:
1
2
3
4
5
6
r
i
[K/W]: 0.341 0.56903 0.28633 0.34265 0.36597 0.023397
τ
i
[s]:
2.5E-4 1.6E-3
0.013093 0.158585 0.778817 15.94388
0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
0
200
400
600
800
1000
1200
t
p
,PULSEWIDTH[s]
Figure 3.
Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=t
p
/T)
Datasheet
di
F
/dt,DIODECURRENTSLOPE[A/µs]
Figure 4.
Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(V
R
=400V)
5
V2.2
2017-10-27
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