NX138AKVL datasheet, PDF - EEWORLD Datasheet

NX138AKVL: DescriptionMOSFET N-CH 60V 190MA TO236AB; Categorysemiconductor Discrete semiconductor; File Size778KB，15 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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MOSFET N-CH 60V 190MA TO236AB

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	190mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	2.5V，10V
Rds On (maximum value) when different Id, Vgs	4.5 ohms @ 190mA, 10V
Vgs (th) (maximum value) when different Id	1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	1.4nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	20pF @ 30V
FET function	-
Power dissipation (maximum)	265mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	TO-236AB
Package/casing	TO-236-3，SC-59，SOT-23-3

	NX138AKVL	NX138AKR
Description	MOSFET N-CH 60V 190MA TO236AB	MOSFET N-CH 60V 190MA TO236AB
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V	60V
Current - Continuous Drain (Id) at 25°C	190mA（Ta）	190mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	2.5V，10V	2.5V，10V
Rds On (maximum value) when different Id, Vgs	4.5 ohms @ 190mA, 10V	4.5 ohms @ 190mA, 10V
Vgs (th) (maximum value) when different Id	1.5V @ 250µA	1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	1.4nC @ 10V	1.4nC @ 10V
Vgs (maximum value)	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	20pF @ 30V	20pF @ 30V
Power dissipation (maximum)	265mW（Ta）	325mW (Ta)
Operating temperature	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	surface mount	surface mount
Supplier device packaging	TO-236AB	TO-236AB
Package/casing	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3

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