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NX138AKR

Description
MOSFET N-CH 60V 190MA TO236AB
Categorysemiconductor    Discrete semiconductor   
File Size778KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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NX138AKR Overview

MOSFET N-CH 60V 190MA TO236AB

NX138AKR Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C190mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,10V
Rds On (maximum value) when different Id, Vgs4.5 ohms @ 190mA, 10V
Vgs (th) (maximum value) when different Id1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)1.4nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)20pF @ 30V
FET function-
Power dissipation (maximum)325mW (Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingTO-236AB
Package/casingTO-236-3,SC-59,SOT-23-3

NX138AKR Related Products

NX138AKR NX138AKVL
Description MOSFET N-CH 60V 190MA TO236AB MOSFET N-CH 60V 190MA TO236AB
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) at 25°C 190mA(Ta) 190mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 2.5V,10V 2.5V,10V
Rds On (maximum value) when different Id, Vgs 4.5 ohms @ 190mA, 10V 4.5 ohms @ 190mA, 10V
Vgs (th) (maximum value) when different Id 1.5V @ 250µA 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 1.4nC @ 10V 1.4nC @ 10V
Vgs (maximum value) ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 20pF @ 30V 20pF @ 30V
Power dissipation (maximum) 325mW (Ta) 265mW(Ta)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount
Supplier device packaging TO-236AB TO-236AB
Package/casing TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3

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