ESH2B-M3, ESH2C-M3, ESH2D-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AA (SMB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
V
F
T
J
max.
Package
Diode variations
2.0 A
100 V, 150 V, 200 V
25 ns
0.93 V
175 °C
DO-214AA (SMB)
Single die
For use in high frequency rectification and freewheeling
application in switching mode converter and inverter for
both consumer.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
ESH2B
EHB
100
70
100
ESH2C
EHC
150
105
150
2.0
60
-55 to +175
ESH2D
EHD
200
140
200
V
V
V
A
A
°C
UNIT
Revision: 19-Feb-15
Document Number: 89482
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ESH2B-M3, ESH2C-M3, ESH2D-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
I
F
= 2 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
I
F
= 2 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
4.0 V, 1 MHz
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 100 °C
I
F
= 2 A
T
A
= 25 °C
T
A
= 125 °C
TEST CONDITIONS
SYMBOL
V
F (1)
I
R
t
rr
t
rr
Q
rr
C
J
VALUE
0.93
2.0
50
25
35
55
20
35
30
UNIT
V
µA
ns
ns
Typical stored charge
Typical junction capacitance
nC
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
(1)
ESH2B
ESH2C
65
20
ESH2D
UNIT
°C/W
(1)
Note
Units mounted on PCB with 8.0 mm x 8.0 mm land areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
ESH2D-M3/52T
ESH2D-M3/5BT
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 19-Feb-15
Document Number: 89482
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ESH2B-M3, ESH2C-M3, ESH2D-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
2.5
1000
Average Forward Rectified Current (A)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 175 °C
100
T
J
= 150 °C
10
T
J
= 125 °C
2.0
1.5
1.0
1
0.5
0.1
T
J
= 25 °C
0
0
25
50
75
100
125
150
175
0.01
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
60
100
Peak Forward Surge Current (A)
40
Junction Capacitance (pF)
1
10
100
50
30
10
20
10
0
1
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse
Voltage
(V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
1
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
T
J
= 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 19-Feb-15
Document Number: 89482
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ESH2B-M3, ESH2C-M3, ESH2D-M3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Vishay General Semiconductor
0.060 (1.52) MIN.
0.220 (5.59) REF.
Revision: 19-Feb-15
Document Number: 89482
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000