IPFH6N03LA G datasheet, PDF - EEWORLD Datasheet

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IPFH6N03LA G: DescriptionMOSFET N-CH 25V 50A DPAK; Categorysemiconductor Discrete semiconductor; File Size534KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPFH6N03LA G Overview

MOSFET N-CH 25V 50A DPAK

IPFH6N03LA G Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	25V
Current - Continuous Drain (Id) at 25°C	50A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	6.2 milliohms @ 50A, 10V
Vgs (th) (maximum value) when different Id	2V @ 30µA
Gate charge (Qg) at different Vgs (maximum value)	19nC @ 5V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	2390pF @ 15V
FET function	-
Power dissipation (maximum)	71W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	P-TO252-3
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63

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IPDH6N03LA G

IPSH6N03LA G

IPFH6N03LA G

IPUH6N03LA G

OptiMOS

2 Power-Transistor

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC for target application

• N-channel, logic level

• Excellent gate charge x

DS(on)

product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

Product Summary

DS(on),max

(SMD version)

mΩ

Type

IPDH6N03LA G

IPFH6N03LA G

IPSH6N03LA G

IPUH6N03LA G

Package

Marking

PG-TO252-3-11

H6N03LA

PG-TO252-3-23

H6N03LA

PG-TO251-3-11

H6N03LA

PG-TO251-3-1

H6N03LA

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=100 °C

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

D,pulse

dv /dt

tot

stg

=25 °C

=50 A,

=25

Ω

=50 A,

=20 V,

di /dt =200 A/µs,

j,max

=175 °C

Value

350

150

±20

-55 ... 175

55/175/56

kV/µs

°C

Unit

Rev. 1.5

page 1

2008-04-14

IPFH6N03LA G Related Products

	IPFH6N03LA G	IPDH6N03LA	IPDH6N03LA_08	IPDH6N03LAG	IPSH6N03LAG	IPFH6N03LAG	IPUH6N03LAG	IPSH6N03LA G	IPUH6N03LA G
Description	MOSFET N-CH 25V 50A DPAK	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated	MOSFET N-CH 25V 50A IPAK	MOSFET N-CH 25V 50A IPAK

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