IPDH6N03LA G
IPSH6N03LA G
IPFH6N03LA G
IPUH6N03LA G
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target application
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
25
6
50
V
mΩ
A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package
Marking
PG-TO252-3-11
H6N03LA
PG-TO252-3-23
H6N03LA
PG-TO251-3-11
H6N03LA
PG-TO251-3-1
H6N03LA
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
Value
50
50
350
150
6
±20
71
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 1.5
page 1
2008-04-14
IPDH6N03LA G
IPSH6N03LA G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
5)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=30 µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=4.5 V,
I
D
=30 A,
IPD version
V
GS
=10 V,
I
D
=50 A
V
GS
=10 V,
I
D
=50 A,
IPD version
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
25
1.2
-
-
1.6
0.1
-
-
-
-
-
-
Values
typ.
IPFH6N03LA G
IPUH6N03LA G
Unit
max.
2.1
75
50
K/W
-
2
1
V
µA
-
-
-
-
-
-
-
35
10
10
8.2
8
5.2
5
1.3
69
100
100
10.2
10
6.2
6
-
-
Ω
S
nA
mΩ
1)
J-STD20 and JESD22
Current is limited by bondwire; with an
R
thJC
=2.1 K/W the chip is able to carry 80 A.
See figure 3
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
2)
3)
4)
5)
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.5
page 2
2008-04-14
IPDH6N03LA G
IPSH6N03LA G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.93
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=25 A,
V
GS
=0 to 5 V
-
-
-
-
-
-
-
-
5.9
2.9
4.1
7.1
14
3.3
13
15
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=2.7
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
1800
690
85
6
5.4
23
4.2
Values
typ.
IPFH6N03LA G
IPUH6N03LA G
Unit
max.
2390
920
130
9
8
34
6.3
pF
ns
7.8
3.8
6.1
10
19
-
17
20
nC
V
nC
50
350
1.2
A
V
Reverse recovery charge
Q
rr
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.5
page 3
2008-04-14
IPDH6N03LA G
IPSH6N03LA G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
IPFH6N03LA G
IPUH6N03LA G
80
60
70
50
60
40
50
P
tot
[W]
40
I
D
[A]
0
50
100
150
200
30
30
20
20
10
10
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
limited by on-state
resistance
1 µs
10 µs
100
1
0.5
Z
thJC
[K/W]
100 µs
0.2
I
D
[A]
DC
1 ms
0.1
0.05
10
10 ms
0.1
0.02
0.01
single pulse
1
0.1
1
10
100
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.5
page 4
2008-04-14
IPDH6N03LA G
IPSH6N03LA G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
100
90
80
70
10 V
4.5 V
IPFH6N03LA G
IPUH6N03LA G
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
18
4.1 V
3.2 V
3.5 V
3.8 V
4.1 V
16
14
I
D
[A]
3.8 V
50
40
3.5 V
R
DS(on)
[m
Ω
]
60
12
10
8
6
10 V
4.5 V
30
20
10
0
0
1
2
3
3.2 V
3V
2.8 V
4
2
0
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
80
70
80
60
60
50
g
fs
[S]
40
20
175 °C
25 °C
I
D
[A]
40
30
20
10
0
0
1
2
3
4
5
0
0
10
20
30
40
50
60
V
GS
[V]
I
D
[A]
Rev. 1.5
page 5
2008-04-14
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