BSS126 E6906 datasheet, PDF - EEWORLD Datasheet

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BSS126 E6906: DescriptionMOSFET N-CH 600V 0.021A SOT-23; Categorysemiconductor Discrete semiconductor; File Size254KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS126 E6906 Overview

MOSFET N-CH 600V 0.021A SOT-23

BSS126 E6906 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	600V
Current - Continuous Drain (Id) at 25°C	21mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	0V，10V
Rds On (maximum value) when different Id, Vgs	500 ohms @ 16mA, 10V
Vgs (th) (maximum value) when different Id	1.6V @ 8µA
Gate charge (Qg) at different Vgs (maximum value)	2.1nC @ 5V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	28pF @ 25V
FET function	exhaustion mode
Power dissipation (maximum)	500mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	PG-SOT23-3
Package/casing	TO-236-3，SC-59，SOT-23-3

BSS126 E6906 Related Products

	BSS126 E6906	BSS126 L6327	BSS126 E6327	BSS126L6327HTSA1	BSS126L6906HTSA1
Description	MOSFET N-CH 600V 0.021A SOT-23	mosfet N-CH 600v 21ma sot-23	MOSFET N-CH 600V 0.021A SOT-23	MOSFET N-CH 600V 0.021A SOT-23	MOSFET N-CH 600V 0.021A SOT-23
FET type	N channel	-	N channel	N channel	N channel
technology	MOSFET (metal oxide)	-	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	600V	-	600V	600V	600V
Current - Continuous Drain (Id) at 25°C	21mA（Ta）	-	21mA（Ta）	21mA（Ta）	21mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	0V，10V	-	0V，10V	0V，10V	0V，10V
Rds On (maximum value) when different Id, Vgs	500 ohms @ 16mA, 10V	-	500 ohms @ 16mA, 10V	500 ohms @ 16mA, 10V	500 ohms @ 16mA, 10V
Vgs (th) (maximum value) when different Id	1.6V @ 8µA	-	1.6V @ 8µA	1.6V @ 8µA	1.6V @ 8µA
Gate charge (Qg) at different Vgs (maximum value)	2.1nC @ 5V	-	2.1nC @ 5V	2.1nC @ 5V	2.1nC @ 5V
Vgs (maximum value)	±20V	-	±20V	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	28pF @ 25V	-	28pF @ 25V	28pF @ 25V	28pF @ 25V
FET function	exhaustion mode	-	exhaustion mode	exhaustion mode	exhaustion mode
Power dissipation (maximum)	500mW（Ta）	-	500mW（Ta）	500mW（Ta）	500mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）	-	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	surface mount	-	surface mount	surface mount	surface mount
Supplier device packaging	PG-SOT23-3	-	PG-SOT23-3	SOT-23-3	SOT-23-3
Package/casing	TO-236-3，SC-59，SOT-23-3	-	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3

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