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BCR148WE6327BTSA1

Description
TRANS PREBIAS NPN 250MW SOT323-3
Categorysemiconductor    Discrete semiconductor   
File Size864KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BCR148WE6327BTSA1 Overview

TRANS PREBIAS NPN 250MW SOT323-3

BCR148WE6327BTSA1 Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)70 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition100MHz
Power - Max250mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingPG-SOT323-3
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