2N6782, 2N6784 and 2N6786
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/556
DESCRIPTION
This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to
the JANTXV level for high-reliability applications. These devices are also available in a low
profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N6782, 2N6784 and 2N6786 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
TO-205AF
(TO-39)
Package
Also available in:
APPLICATIONS / BENEFITS
•
•
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
U-18 LCC package
(surface mount)
2N6782U & 2N6786U
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +25 °C
Drain-Source Voltage, dc
2N6782
2N6784
2N6786
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T
C
= +25 ºC
2N6782
2N6784
2N6786
(2)
Drain Current, dc @ T
C
= +100 ºC
2N6782
2N6784
2N6786
(3)
Off-State Current (Peak Total Value)
2N6782
2N6784
2N6786
Source Current
2N6782
2N6784
2N6786
See notes on next page.
Symbol
T
J
& T
stg
R
ӨJC
P
T
V
DS
V
GS
I
D1
Value
-55 to +150
8.33
0.8
15
100
200
400
± 20
3.50
2.25
1.25
2.25
1.50
0.80
14.0
9.0
5.5
3.50
2.25
1.25
Unit
o
°C
C/W
W
V
V
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
D2
A
I
DM
A (pk)
I
S
A
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 1 of 9
2N6782, 2N6784 and 2N6786
Notes:
1. Derate linearly 0.12 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal wires and may be limited due to
pin diameter.
3. I
DM
= 4 x I
D1
as calculated in note 1.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6782
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
I
F
R
G
V
DD
V
DS
V
GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 2 of 9
2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55 °C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125 °C
Drain Current
V
GS
= 0 V, V
DS
= 80 V
V
GS
= 0 V, V
DS
= 160 V
V
GS
= 0 V, V
DS
= 320 V
Drain Current
V
GS
= 0 V, V
DS
= 80 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 160 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 320 V, T
J
= +125 °C
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.50 A pulsed
V
GS
= 10 V, I
D
= 0.80 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 3.50 A pulsed
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.25 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125 °C
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.50 A pulsed
V
GS
= 10 V, I
D
= 0.80 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 3.50 A pulsed
V
GS
= 0 V, I
D
= 2.25 A pulsed
V
GS
= 0 V, I
D
= 1.25 A pulsed
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
Symbol
Min.
Max.
Unit
V
(BR)DSS
100
200
400
2.0
1.0
4.0
5.0
±100
±200
V
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
V
nA
I
DSS1
25
µA
I
DSS2
0.25
mA
r
DS(on)1
0.60
1.50
3.60
0.61
1.60
3.70
Ω
r
DS(on)2
Ω
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
r
DS(on)3
1.08
2.81
7.92
1.5
1.5
1.4
Ω
V
SD
V
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 3 of 9
2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 3.50 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.25 A, V
DS
= 100 V
V
GS
= 10 V, I
D
= 1.25 A, V
DS
= 200 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 3.50 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.25 A, V
DS
= 100 V
V
GS
= 10 V, I
D
= 1.25 A, V
DS
= 200 V
Gate to Drain Charge
V
GS
= 10 V, I
D
= 3.50 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.25 A, V
DS
= 100 V
V
GS
= 10 V, I
D
= 1.25 A, V
DS
= 200 V
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
Symbol
Min.
Max.
Unit
Q
g(on)
8.1
8.6
12
1.7
1.5
1.8
4.5
5.5
7.6
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 3.50 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 50 V
I
D
= 2.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 100 V
I
D
= 1.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 200 V
Rinse time
I
D
= 3.50 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 50 V
I
D
= 2.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 100 V
I
D
= 1.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 200 V
Turn-off delay time
I
D
= 3.50 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 50 V
I
D
= 2.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 100 V
I
D
= 1.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 200 V
Fall time
I
D
= 3.50 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 50 V
I
D
= 2.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 100 V
I
D
= 1.25 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 200 V
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 3.50 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 2.25 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 1.25 A
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
Symbol
Min.
Max.
Unit
t
d(on)
15
ns
t
r
25
20
20
ns
2N6782
2N6784
2N6786
t
d(off)
25
30
35
ns
2N6782
2N6784
2N6786
2N6782
2N6784
2N6786
t
f
20
20
30
180
350
540
ns
t
rr
ns
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 4 of 9
2N6782, 2N6784 and 2N6786
GRAPHS
Thermal Response (Z
θ
JC
)
t
1
, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 5 of 9
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