1N5399GHB0G datasheet, PDF - EEWORLD Datasheet

1N5399GHB0G: DescriptionDIODE GEN PURP 1.5A DO204AC; Categorysemiconductor Discrete semiconductor; File Size194KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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1N5399GHB0G Overview

DIODE GEN PURP 1.5A DO204AC

Parameter Name	Attribute value
Diode type	standard
Current - average rectification (Io)	1.5A
Voltage at different If - Forward (Vf	1V @ 1.5A
speed	Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current	5µA @ 1000V
Capacitance at different Vr, F	15pF @ 4V，1MHz
Installation type	Through hole
Package/casing	DO-204AC, DO-15, axial
Supplier device packaging	DO-204AC（DO-15）
Operating Temperature - Junction	-55°C ~ 150°C

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