MBR1090FCT datasheet, PDF - EEWORLD Datasheet

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MBR1090FCT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size118KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR1090FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR1090FCT

parameter:

Repetitive reverse voltage peak Vrrm: 90V

Maximum average rectified current Io: 10A

Maximum forward surge current 0.8V when IF=5A

Maximum feedback current IR: 50uA when VR=90V

Package: ITO-220AB

MBR1090FCT Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR1040FCT SERIES

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

0.112(2.85)

0.100(2.55)

0.134(3.4)

0.118(3.0)

0.272(6.9)

0.248(6.3)

40 to 200 Volts

CURRENT

10 Amperes

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Lead free in comply with EU RoHS 2002/95/EC directives

0.406(10.3)

0.381(9.7)

0.189(4.8)

0.165(4.2)

0.130(3.3)

0.114(2.9)

0.606(15.4)

0.583(14.8)

MECHANICAL DATA

• Case: ITO-220AB molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.055 ounces, 1.5615 grams.

0.055(1.4)

0.039(1.0)

0.055(1.4)

0.039(1.0)

0.028(0.7)

0.019(0.5)

0.100(2.55)

0.177(4.5)

0.137(3.5)

0.543(13.8)

0.512(13.0)

0.114(2.9)

0.098(2.5)

0.100(2.55)

0.027(0.67)

0.022(0.57)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Ma xi mum Rec urrent P ea k Reverse Vo ltag e

Ma xi mum RMS Vo ltage

Ma xi mum D C B loc ki ng Volta ge

Ma xi mum A ve rage F o rward C urrent

(S e e fi g.1)

Pe ak F o rward S urg e C urrent : 8.3 ms s i ng le

half si ne-wave superi mp ose d on rated lo ad

(J E D E C method)

Ma xi mum F o rwa rd Volta ge at 5A , p er le g

Ma xi mum D C Revers e C urrent T

=2 5

at Ra ted D C B loc ki ng Volta ge T

=1 25

Typ i ca l Therma l Res i sta nc e

Op era ti ng and S to rage J uncti on

Temp erature Ra ng e

S YMB OL

RRM

RMS

F( AV )

MB R1 040F C T MB R1045 FC T MB R10 50F C T MB R10 60F C T MB R1 080F C T MB R1 090F C T MB R10 100F C T MB R10 150F C T MB R1 0200 FC T

UNITS

3 1.5

10 0

15 0

10 5

15 0

20 0

1 40

20 0

F SM

1 50

0.7

0.75

0.05

0.8

0.9

S TG

-5 5 to + 1 5 0

C /W

-65 to + 1 75

Notes :

Both Bonding and Chip structure are available.

April 21,2011-REV.05

PAGE . 1

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