SB20100LCT_TO_00001 datasheet, PDF

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SB20100LCT_TO_00001: DescriptionDC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 700mV @ 10A; CategoryDiscrete semiconductor Schottky diode; File Size81KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB20100LCT_TO_00001 Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 700mV @ 10A

SB20100LCT_TO_00001 Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	100V
Average rectified current (Io)	2 x 10A
Forward voltage drop (Vf)	700mV @ 10A

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SB20100LCT

DUAL LOW VF SCHOTTKY RECTIFIER

VOLTAGE

FEATURES

• Low forward voltage drop, low power losses

• High efficiency operation

• In compliance with EU RoHS 2002/95/EC directives

100 Volts

CURRENT

20 Amperes

MECHANICAL DATA

Case : TO-220AB, Plastic

Terminals : Solderable per MIL-STD-750, Method 2026

.058(1.47)

Weight: 0.0655 ounces, 1.859 grams.

.042(1.07)

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig.3)

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load per diode

Typical thermal resistance

Operating junction

Storage temperature range

per device

per diode

SYMBOL

RRM

F(AV)

FSM

STG

VALUE

100

200

2.5

-55 to + 150

UNIT

C/W

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage per diode

SYMBOL

TEST CONDITIONS

=1.0mA

=5A

=10A

=5A

=10A

=70V

Reverse current per diode

(2)

MIN.

103

TYP.

120

0.55

0.52

0.62

MAX.

0.60

0.75

0.7

500

UNIT

μA

Instantaneous forward voltage per

diode

(1)

=25

=125

=100V

=25

=125

Note.1 Pulse test : 380μs pulse width, 1% duty cycle

2. Pulse test : Pulse width < 2.5ms

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

June.9.2010-REV.01

PAGE . 1

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