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2SA1020L-O-T9N-K

Description
SILICON PNP EPITAXIAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size196KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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2SA1020L-O-T9N-K Overview

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020L-O-T9N-K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-92
package instructionTO-92NL, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
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