GP1M010A080H
GP1M010A080FH
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
V
DSS
= 880 V @T
jmax
I
D
= 9.5A
R
DS(ON)
= 1.05
(max)
@ V
GS
= 10 V
D
G
S
Device
GP1M010A080H
GP1M010A080FH
Package
TO-220
TO-220F
Marking
GP1M010A080H
GP1M010A080FH
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation
Peak Diode Recovery dv/dt
(Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
V
DSS
V
GS
T
C
= 25
T
C
= 100
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25
Derate above 25
P
D
dv/dt
T
J
, T
STG
T
L
GP1M010A080H
GP1M010A080FH
Unit
V
V
800
±30
9.5
6.4
38
917
9.5
29
290
2.32
4.5
-55~150
300
48
0.38
9.5 *
6.4 *
38*
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
September 2011 : Rev0
Symbol
R
JC
R
JA
www.GPTechGroup.com
GP1M010A080H
GP1M010A080FH
Unit
/W
/W
1/7
0.43
62.5
2.6
62.5
GP1M010A080H
GP1M010A080FH
Electrical Characteristics :
T
C
=25
Parameter
, unless otherwise noted
Test condition
Min
Typ
Max
Units
Symbol
OFF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Source Leakage Current
Reverse Gate-Source Leakage Current
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125
°
C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
800
--
--
--
--
--
--
--
--
--
--
10
100
100
-100
V
µA
µA
nA
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
(Note 4)
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 4.75 A
V
DS
= 30 V, I
D
= 4.75 A
2
--
--
--
0.9
6.3
4
1.05
--
V
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2336
214
29
--
--
--
pF
pF
pF
SWITCHING
Turn-On Delay Time
(Note 4,5)
Turn-On Rise Time
(Note 4,5)
Turn-Off Delay Time
(Note 4,5)
Turn-Off Fall Time
(Note 4,5)
Total Gate Charge
(Note 4,5)
Gate-Source Charge
(Note 4,5)
Gate-Drain Charge
(Note 4,5)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
= 640V, I
D
= 9.5 A,
V
GS
= 10 V
V
DD
= 400 V, I
D
= 9.5 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
63
62
256
72
53
10
22.3
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
(Note 4)
Reverse Recovery Charge
(Note 4)
I
S
I
SM
V
SD
t
rr
Q
rr
---
---
V
GS
= 0 V, I
S
= 9.5 A
V
GS
= 0 V, I
S
= 9.5 A
dI
F
/ dt = 100 A/µs
--
--
--
--
--
--
--
--
453
5.3
9.5
38
1.5
--
--
A
A
V
ns
µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=17.2mH, I
AS
= 9.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
3 I
SD
≤
9.5A, di/dt
≤
200A/µs , V
DD
≤
BV
DS
, Starting T
J
= 25
4. Pulse Test :Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
September 2011 : Rev0
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2/7
GP1M010A080H
GP1M010A080FH
25
Top V
GS
=15.0V
V
DS
= 30V
250
μs
Pulse Test
20
Drain Current, I
D
[A]
15
Bottom
Drain Current, I
D
[A]
10.0V
8.0V
7.0V
6.5V
6.0V
5.0V
10
150
25
1
10
-55
5
1. T
C
= 25
0
2. 250μs Pulse Test
0
10
20
30
40
50
0.1
0
2
4
6
8
10
Drain-Source Voltage, V
DS
[V]
Gate-Source Voltage, V
GS
[V]
1.6
50
Reverse Drain Current, I
DR
[A]
T
J
= 25
V
GS
= 0V
250μs Pulse Test
Drain-Source On-Resistance
R
DS(ON)
[Ω]
1.4
40
V
GS
= 10V
1.2
30
1.0
V
GS
= 20V
20
150
10
25
0.8
0.6
0
5
10
15
20
25
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain Current,I
D
[A]
Source-Drain Voltage, V
SD
[V]
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
GS
= 0 V
f = 1 MHz
12
I
D
= 9.5A
4000
Gate-Source Voltage, V
GS
[V]
10
V
DS
= 160V
Capacitance [pF]
3000
C
iss
C
oss
C
rss
8
V
DS
= 400V
V
DS
= 640V
6
2000
4
1000
2
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
60
70
Drain-Source Voltage, V
DS
[V]
Total Gate Charge, Q
G
[nC]
September 2011 : Rev0
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3/7
GP1M010A080H
GP1M010A080FH
1.20
3.0
V
GS
= 0 V
I
D
= 250
μA
V
GS
= 10 V
I
D
= 4.5 A
Drain-Source Breakdown Voltage
BV
DSS
, (Normalized)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-80
Drain-Source On-Resistance
R
DS(ON)
, (Normalized)
0
40
80
o
1.15
2.5
2.0
1.5
1.0
0.5
-40
120
160
Junction Temperature,T
J
[ C]
0.0
-80
-40
0
40
80
o
120
160
Junction Temperature, T
J
[ C]
12
1.5
10
8
Gate Threshold Voltage
V
TH
, (Normalized)
Drain Current, I
D
[A]
1.0
6
4
0.5
2
V
GS
= 10 V
I
D
= 250
A
0.0
-80
0
25
50
75
100
125
150
-40
0
40
80
o
120
160
Case Temperature, T
C
[ ]
Junction Temperature, T
J
[ C]
GP1M010A080H
10
2
GP1M010A080FH
10
10 us
100 us
2
Operation in This Area
is Limited by R
DS(on)
Operation in This Area
is Limited by R
DS(on)
10 us
Drain Current, I
D
[A]
Drain Current, I
D
[A]
10
1
1 ms
10 ms
100 ms
DC
10
1
100 us
1 ms
10 ms
100 ms
10
0
10
0
DC
10
-1
T
C
= 25 C
T
J
= 150 C
Single Pulse
o
o
10
-1
T
C
= 25 C
T
J
= 150 C
Single Pulse
o
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
Drain-Source Voltage, V
DS
[V]
Drain-Source Voltage, V
DS
[V]
September 2011 : Rev0
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4/7
GP1M010A080H
GP1M010A080FH
GP1M010A080H
Duty=0.5
Transient thermal impedance
Z
thJC
(t)
10
-1
0.2
0.1
0.05
0.02
P
DM
t
T
10
-2
0.01
single pulse
Duty = t/T
Z
thJC
(t) = 0.43
/W Max.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width, t [sec]
GP1M010A080FH
Duty=0.5
Transient thermal impedance
Z
thJC
(t)
10
0
0.2
0.1
0.05
10
-1
0.02
0.01
P
DM
t
T
single pulse
10
-2
Duty = t/T
Z
thJC
(t) = 2.6
/W Max.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width, t [sec]
September 2011 : Rev0
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