AS6C6416-55BINTR datasheet, PDF - EEWORLD Datasheet

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AS6C6416-55BINTR: DescriptionIC SRAM 64M PARALLEL 48TFBGA; Categorystorage; File Size773KB，11 Pages; ManufacturerAlliance Memory; Environmental Compliance

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AS6C6416-55BINTR Overview

IC SRAM 64M PARALLEL 48TFBGA

AS6C6416-55BINTR Parametric

Parameter Name	Attribute value
memory type	Volatile
memory format	SRAM
technology	SRAM
storage	64Mb （4M x 16）
Write cycle time - words, pages	55ns
interview time	55ns
memory interface	in parallel
Voltage - Power	2.7 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	surface mount
Package/casing	48-LFBGA
Supplier device packaging	48-TFBGA（8x10）

AS6C6416-55BINTR Related Products

	AS6C6416-55BINTR	AS6C6416-55BIN
Description	IC SRAM 64M PARALLEL 48TFBGA	IC SRAM 64M PARALLEL 48TFBGA
memory type	Volatile	Volatile
memory format	SRAM	SRAM
technology	SRAM	SRAM
storage	64Mb （4M x 16）	64Mb （4M x 16）
Write cycle time - words, pages	55ns	55ns
interview time	55ns	55ns
memory interface	in parallel	in parallel
Voltage - Power	2.7 V ~ 3.6 V	2.7 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TA）	-40°C ~ 85°C（TA）
Installation type	surface mount	surface mount
Package/casing	48-LFBGA	48-LFBGA
Supplier device packaging	48-TFBGA（8x10）	48-TFBGA（8x10）

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