5KP12C datasheet, PDF - EEWORLD Datasheet

5KP12C: Description5000 W, BIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size114KB，4 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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5000 W, BIDIRECTIONAL, SILICON, TVS DIODE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum breakdown voltage	16.3 V
Minimum breakdown voltage	13.3 V
Breakdown voltage nominal value	14.8 V
Shell connection	ISOLATED
Maximum clamping voltage	22 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	5000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	8 W
Maximum repetitive peak reverse voltage	12 V
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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