UNISONIC TECHNOLOGIES CO., LTD
82NXX
VOLTAGE DETECTORS
3
CMOS IC
DESCRIPTION
The UTC
82NXX
series are highly precise, low power
consumption voltage detectors. Detect voltage is extremely
accurate with minimal temperature drift. N-channel open drain
output configurations are available.
2
1
1
SOT-23
TO-92
1
FEATURES
* High-accuracy detection voltage : ± 2%
* Detect voltage range : 0.9V to 6.0V in 0.1V increments
* Detect voltage temperature characteristics: TYP.±100ppm/℃.
* Wide operating voltage range : 0.7V to 10.0V
* Low current consumption : TYP 0.7µA(at V
IN
=1.5V)
SOT-89
*Pb-free plating product number: 82NXXL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
82Nxx-AB3-D-R
82NxxL-AB3-D-R
82Nxx-AB3-E-R
82NxxL-AB3-E-R
82Nxx-AE3-5-R
82NxxL-AE3-5-R
82Nxx-T92-D-B
82NxxL-T92-D-B
82Nxx-T92-D-K
82NxxL-T92-D-K
82Nxx-T92-E-B
82NxxL-T92-E-B
82Nxx-T92-E-K
82NxxL-T92-E-K
Package
SOT-89
SOT-89
SOT-23
TO-92
TO-92
TO-92
TO-92
Pin assignment
1
2
3
I
G
O
O
I
G
G
O
I
I
G
O
I
G
O
O
I
G
O
I
G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
Note: 1. Pin assignment: I:Vin O:Vout G:Vss
2.xx: Output Voltage, refer to Marking Information
82NxxL-AB3-D-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(5)Output Voltage Code
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) refer to Pin Assignment
(3) AB3: SOT-89, AE3: SOT-23, T92: TO-92
(4) L: Lead Free Plating, Blank: Pb/Sn
(5) xx: refer to Marking Information
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QW-R502-057,B
82NXX
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
09:0.9V
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
MARKING
Pin Code
Date Code
N:N-Cannel
CMOS IC
SOT-89
82NXXX
1
2
3
Space :Pb/Sn
L:Pb-free
Voltage Code
N:Channel
TO-92
UTC
82NXXX
Space :Pb/Sn
L:Pb-free
Voltage Code
Date Code
Pin Code
1
2
3
N
2
3
SOT-23
Voltage Code
Space :Pb/Sn
L:Pb-free
1
MARKING CODE FOR SOT-23
PART
NUMBER
82N09
82N10
82N11
82N12
82N13
82N14
82N15
82N16
82N17
82N18
82N19
82N20
82N21
82N22
82N23
82N24
82N25
82N26
82N27
82N28
82N29
DETECT VOLATGE
VOLTAGE
0.9V
1.0V
1.1V
1.2V
1.3V
1.4V
1.5V
1.6V
1.7V
1.8V
1.9V
2.0V
2.1V
2.2V
2.3V
2.4V
2.5V
2.6V
2.7V
2.8V
2.9V
CODE
09
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
MARKING CODE
N09
N10
N11
N12
N13
N14
N15
N16
N17
N18
N19
N20
N21
N22
N23
N24
N25
N26
N27
N28
N29
PART
NUMBER
82N30
82N31
82N32
82N33
82N34
82N35
82N36
82N37
82N38
82N39
82N40
82N41
82N42
82N43
82N44
82N45
DETECT VOLATGE
VOLTAGE
3.0V
3.1V
3.2V
3.3V
3.4V
3.5V
3.6V
3.7V
3.8V
3.9V
4.0V
4.1V
4.2V
4.3V
4.4V
4.5V
CODE
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
MARKING CODE
N30
N31
N32
N33
N34
N35
N36
N37
N38
N39
N40
N41
N42
N43
N44
N45
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2 of 17
QW-R502-057,B
82NXX
BLOCK DIAGRAM
CMOS IC
V
IN
V
OUT
+
-
V
REF
Vss
TYPICAL APPLICATION CIRCUIT
V
IN
V
IN
Vss
V
OUT
R
100kΩ
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QW-R502-057,B
82NXX
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
IN
I
OUT
V
OUT
CMOS IC
RATINGS
UNIT
Input Voltage
12
V
Output Current
50
mA
Output Voltage
Vss-0.3 ~ V
IN
+0.3
V
SOT-23
150
Power Dissipation
P
D
mW
SOT-89
500
TO-92
300
℃
Operating Temperature
T
OPR
-40 ~ +85
℃
Storage Temperature
T
STG
-40 ~ +150
Note: 1.Absolute maximum ratings are those values beyond which the device which the device could be permanently
damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from -40℃~+85℃, characteristic and correlation with static process control.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
Detection voltage (0.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITONS
MIN
TYP
MAX.
UNIT
V
DF
V
DF
×1.02
Detect Voltage (Note1)
V
DF
1
V
DF
×0.98
V
(note2)
Hysteresis Range
V
HYS
1
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
V
V
IN
=1.5V
0.7
2.3
µA
Supply Current
I
SS
2
V
IN
=5V
1.1
3.6
µA
Operating Voltage
V
IN
1
0.7
6.0
V
Output Current
I
OUT
3
V
DS
=0.5V, V
IN
=0.7V
0. 1
0.8
mA
△V
DF
Temperature Characteristics
±100
ppm/℃
-40
℃
≤T
OPR
≤85℃
△T
OPR
·V
DF
Transient Delay Time
t
DLY
4
0.2
ms
Detection voltage (1.0V ~ 1.5V)
PARAMETER
Detect Voltage (Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Temperature Characteristics
Transient Delay Time
Detection voltage (1.6V ~ 1.9V)
PARAMETER
Detect Voltage(Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Temperature Characteristics
Transient Delay Time
SYMBOL
V
DF
V
HYS
I
SS
V
IN
I
OUT
△V
DF
△T
OPR
·V
DF
t
DLY
CIRCUIT TEST CONDITONS
1
1
2
1
3
TYP
MAX.
UNIT
V
DF
V
DF
×1.02
V
DF
×0.98
V
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
V
V
IN
=1.5V
0.7
2.3
µA
1.1
3.6
µA
V
IN
=5V
0.7
6.0
V
V
DS
=0.5V, V
IN
=1.0V
0.85
2.7
mA
±100
0.2
TYP
MAX.
V
DF
V
DF
×1.02
V
DF
×0.98
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
V
IN
=1.5V
0.7
2.3
V
IN
=5V
1.1
3.6
0.7
10
V
DS
=0.5V, V
IN
=1.0V
1.0
2.2
-40
℃
≤T
OPR
≤85℃
4
±100
0.2
MIN
ppm/℃
ms
UNIT
V
V
µA
µA
V
mA
ppm/℃
ms
MIN
-40
℃
≤T
OPR
≤85℃
4
SYMBOL CIRCUIT TEST CONDITONS
V
DF
V
HYS
I
SS
V
IN
I
OUT
△V
DF
△T
OPR
·V
DF
t
DLY
1
1
2
1
3
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QW-R502-057,B
82NXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.4V)
PARAMETER
SYMBOL
Detect Voltage(Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
V
DF
V
HYS
I
SS
CIRCUIT
1
1
2
1
3
V
IN
=2.0V
V
IN
=5.0V
V
DS
=0.5V, V
IN
=2.0V
-40
℃
≤T
OPR
≤85℃
4
CIRCUIT
1
1
2
1
3
V
IN
=2.0V
V
IN
=5.0V
V
DS
=0.5V, V
IN
=2.0V
-40
℃
≤T
OPR
≤85℃
4
CIRCUIT
1
1
2
1
3
V
IN
=3.0V
V
IN
=5.0V
V
DS
=0.5V, V
IN
=3.0V
-40
℃
≤T
OPR
≤85℃
4
CIRCUIT
1
1
2
1
3
V
IN
=3.0V
V
IN
=5.0V
V
DS
=0.5V, V
IN
=3.0V
-40
℃
≤T
OPR
≤85℃
4
TEST CONDITONS
MIN
TEST CONDITONS
MIN
TEST CONDITONS
MIN
TEST CONDITONS
MIN
CMOS IC
V
IN
I
OUT
△V
DF
Temperature Characteristics
△T
OPR
·V
DF
Transient Delay Time
t
DLY
Detection voltage (2.5V ~ 2.9V)
PARAMETER
SYMBOL
Detect Voltage(Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Temperature
Characteristics
Transient Delay Time
V
DF
V
HYS
I
SS
V
IN
I
OUT
△V
DF
△T
OPR
·V
DF
t
DLY
TYP
MAX.
V
DF
V
DF
×1.02
V
DF
×0.98
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
0.8
2.7
1.1
3.6
0.7
10
3.0
7.7
±100
0.2
TYP
MAX.
V
DF
V
DF
×1.02
V
DF
×0.98
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
0.8
2.7
1.1
3.6
0.7
10
3.0
7.7
±100
0.2
TYP
MAX.
V
DF
V
DF
×1.02
V
DF
×0.98
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
0.9
3.0
1.1
3.6
0.7
10
5.0
10.1
±100
0.2
TYP
MAX.
V
DF
V
DF
×1.02
V
DF
×0.98
(note2)
V
DF
×0.02 V
DF
×0.05 V
DF
×0.08
0.9
3.0
1.1
3.6
0.7
10
5.0
10.1
±100
0.2
UNIT
V
V
µA
µA
V
mA
ppm/℃
ms
UNIT
V
V
µA
µA
V
mA
ppm/℃
ms
UNIT
V
V
µA
µA
V
mA
ppm/℃
ms
UNIT
V
V
µA
µA
V
mA
ppm/℃
ms
Detection voltage (3.0V ~ 3.4V)
PARAMETER
SYMBOL
Detect Voltage(Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Temperature
Characteristics
Transient Delay Time
V
DF
V
HYS
I
SS
V
IN
I
OUT
△V
DF
△T
OPR
·V
DF
t
DLY
Detection voltage (3.5V ~ 3.9V)
PARAMETER
SYMBOL
Detect Voltage(Note1)
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Temperature
Characteristics
Transient Delay Time
V
DF
V
HYS
I
SS
V
IN
I
OUT
△V
DF
△T
OPR
·V
DF
t
DLY
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QW-R502-057,B
MEMS sensors
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