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ED502YT_05

Description
5 A, 400 V, SILICON, RECTIFIER DIODE, TO-251AB
Categorysemiconductor    Discrete semiconductor   
File Size422KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ED502YT_05 Overview

5 A, 400 V, SILICON, RECTIFIER DIODE, TO-251AB

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DATA SHEET
ED502YT~ED506YT
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-
S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high vltage.
• Epitaxial chip construction.
.307(7.8)
.283(7.2)
.225(5.7)
.209(5.3)
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
200 to 600 Volts
VOLTAGE
6.0 Amperes
TO-251AB
Unit : inch (mm)
• Pb free product are available : 99% Sn above can meet Rohs enivronment
substance directive request
.063(1.6)
.047(1.2)
.216(5.5)
.200(5.1)
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
MECHANICAL DATA
Case: TO-252 molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.0015 ounces, 0.4grams.
.09 .09
(2.3) (2.3)
.02(0.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A D C
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e
TA = 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
0 .9 5
E D 5 0 2 YT
200
140
200
E D 5 0 3 YT
300
210
300
5 .0
75
1 .2 5
5 .0
50
35
9 .0
- 5 0 TO + 1 2 5
O
E D 5 0 4 YT
400
280
400
E D 5 0 6 YT
600
420
600
U N IT S
V
V
V
A
A
1 .7 0
V
µA
I
R
T
rr
R
θ
J A
T
J
, T
S TG
nS
C / W
O
C
NOTES:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to CASE.
REV.0-MAR.19.2005
PAGE . 1
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