KSE5020AS datasheet, PDF - EEWORLD Datasheet

KSE5020AS: DescriptionTRANS NPN 500V 3A TO-126; Categorysemiconductor Discrete semiconductor; File Size44KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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KSE5020AS Overview

TRANS NPN 500V 3A TO-126

Parameter Name	Attribute value
Transistor type	NPN
Current - Collector (Ic) (Maximum)	3A
Voltage - collector-emitter breakdown (maximum)	500V
Vce saturation value (maximum value) when different Ib,Ic	1V @ 300mA，1.5A
Current - collector cutoff (maximum)	10µA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	15 @ 300mA，5V
Power - Max	30W
Frequency - Transition	18MHz
Operating temperature	150°C（TJ）
Installation type	Through hole
Package/casing	TO-225AA，TO-126-3
Supplier device packaging	TO-126-3

	KSE5020AS	KSE5020S
Description	TRANS NPN 500V 3A TO-126	TRANS NPN 500V 3A TO-126
Transistor type	NPN	NPN
Current - Collector (Ic) (Maximum)	3A	3A
Voltage - collector-emitter breakdown (maximum)	500V	500V
Vce saturation value (maximum value) when different Ib,Ic	1V @ 300mA，1.5A	1V @ 300mA，1.5A
Current - collector cutoff (maximum)	10µA（ICBO）	10µA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	15 @ 300mA，5V	15 @ 300mA，5V
Power - Max	30W	30W
Frequency - Transition	18MHz	18MHz
Operating temperature	150°C（TJ）	150°C（TJ）
Installation type	Through hole	Through hole
Package/casing	TO-225AA，TO-126-3	TO-225AA，TO-126-3
Supplier device packaging	TO-126-3	TO-126-3

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