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MT75DT08L1

Description
Three Phase Bridge Thyristor
File Size270KB,5 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Three Phase Bridge Thyristor

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MT75DT18L1
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Features
Circuit
Blocking voltage:800 to 1800V
Three Phase Bridge and a Thyristor
Isolated Module package
800 to 1800V
75Amp
Applications
Inverter for AC or DC motor control
Current stabilized power supply
Switching power supply
UL recognized applied for file no. E360040
Module Type
TYPE
MT75DT08L1
MT75DT12L1
MT75DT16L1
MT75DT18L1
V
RRM
/V
DRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
it
Visol
Tvj
Tstg
Mt
Ms
Weight
2
Item
Conditions
Tc=101℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
75
920
4200
3000
-40 to +150
-40 to +125
3±15%
3±15%
210
Units
A
A
A
2
s
V
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M5)
Module(Approximately)
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heatsink
Values
0.20
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V
FM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=100A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.40
≤0.5
≤6
Units
V
mA
mA
I
RRM
Document Number: S-M0056
Rev.1.0, May.31, 2013
www.apt-semi.com
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