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FCH47N60-F085

Description
MOSFET 600V, 47A, SuperFET
CategoryDiscrete semiconductor    The transistor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FCH47N60-F085 Overview

MOSFET 600V, 47A, SuperFET

FCH47N60-F085 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Manufacturer packaging code340CK
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)810 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)47 A
Maximum drain current (ID)47 A
Maximum drain-source on-resistance0.079 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)417 W
GuidelineAEC-Q101
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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