EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF1405ZS

Description
AUTOMOTIVE MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size395KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF1405ZS Overview

AUTOMOTIVE MOSFET

IRF1405ZS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)420 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)150 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0049 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)600 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97018A
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
HEXFET
®
Power MOSFET
D
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
G
S
Description
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
IRF1405ZPbF
D
2
Pak
TO-262
IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Max.
150
110
75
600
230
1.5
± 20
Units
A
™
W
W/°C
V
mJ
A
mJ
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ù
h
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
y
y
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
07/14/10

IRF1405ZS Related Products

IRF1405ZS IRF1405Z
Description AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 420 mJ 270 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 150 A 75 A
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.0049 Ω 0.0049 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 230 W 230 W
Maximum pulsed drain current (IDM) 600 A 600 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
Network serial port transparent transmission solution
When I just graduated, I worked as an electromechanical engineer on the spraying line of an automobile company. Factory equipment is becoming more and more intelligent. The engineer who led me can adj...
我芯永恒 MCU
Not only 51, in the eyes of teacher Guo Tianxiang, MSP430 can also be learned in ten days
[align=left][color=rgb(51, 51, 51)][font=微软雅黑][size=4]Although there are more and more hardware teaching resources on the Internet, the status of classic tutorials is still difficult to shake. Teacher...
EE大学堂 Training Edition
Thank you for having you + my master @chat, laugh, make noise
Thank you Master! When I first joined the company, I was only 20 years old. I was assigned a female master who was not much older than me. She was much better than me in terms of work and interpersona...
dfwisdom Talking
Challenges in Developing and Deploying Power Management
DPM for embedded Linux is an evolving technology. The core technology is improving thanks to contributions from developers in the global open source community, but practical applications still have to...
zbz0529 Power technology
TMS570LS12x Hercules Development Kit (HDK) Contents
[i=s]This post was last edited by Jacktang on 2018-11-04 15:39[/i] Everything you need to develop and run applications for the TMS570LS1227 microcontroller is included: Board: – TMS570LS12 cardCables ...
Jacktang Microcontroller MCU
Application of wireless transmitter chip A7105 in RF short-distance communication
1: Comparison of the three mainstream RF solutions and their advantages and disadvantages  1): Bluetooth solution (IEEE802.15)   Bluetooth is a radio technology that supports short-distance communicat...
Jacktang RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号