EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF1405Z

Description
AUTOMOTIVE MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size395KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF1405Z Overview

AUTOMOTIVE MOSFET

IRF1405Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)270 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0049 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)600 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97018A
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
HEXFET
®
Power MOSFET
D
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
G
S
Description
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
IRF1405ZPbF
D
2
Pak
TO-262
IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Max.
150
110
75
600
230
1.5
± 20
Units
A
™
W
W/°C
V
mJ
A
mJ
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ù
h
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
y
y
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
07/14/10

IRF1405Z Related Products

IRF1405Z IRF1405ZS
Description AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-220AB D2PAK
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 270 mJ 420 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 75 A 150 A
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.0049 Ω 0.0049 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 230 W 230 W
Maximum pulsed drain current (IDM) 600 A 600 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
#国芯经验有奖作文# Come and share your days of being addicted to "playing with Guoxin and looking for alternatives"
Time for submission: From now until June 22 How to participate (1) Click to enterDomestic chip exchange section (2) Write your own topic and post about your experience of being obsessed with the Natio...
EEWORLD社区 Domestic Chip Exchange
The role of the diode at the input point of the comparator LM393
As shown in the figure, what is the role of diodes D1 and D2? Thank you!...
xiaxingxing Analog electronics
Please help! The ADC sampling fluctuation in stm32h743 is very large, and the 16-bit resolution exceeds the 8-bit fluctuation
I hope you can give me some advice! ! Thank you! ! The ADC sampling fluctuation in stm32h743 is very large, the 16-bit resolution exceeds the 8-bit fluctuation, and there is no conversion data output ...
877562693 Motor Drive Control(Motor Control)
Apply for ufun learning board, introductory & deep learning simulation, engineering skills
Apply for ufun learning board, introductorydeep learning simulation, engineering skillsEvent DetailsBefore this, we at EEWorld have held a UFUN learning event: Follow the post to apply for a free UFUN...
okhxyyo MCU
I downloaded a source code from the Internet. Please help me find out what IDE this project was developed in. Thanks
I downloaded a source code from the Internet. Please help me see what IDE this project is developed in. Thank you. As shown in the figure below...
深圳小花 MCU
X-NUCLEO-IKS01A3 MakeCode Driver (Extension) Collection
X-NUCLEO-IKS01A3 MakeCode Driver CollectionMakeCode Extension for the LSM6DSO Sensor LIS2DW12 Accelerometer MakeCode Driver MakeCode driver for the magnetic field sensor LIS2MDL STTS751 High Accuracy ...
dcexpert ST Sensors & Low Power Wireless Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号