EEWORLDEEWORLDEEWORLD

Part Number

Search

GS8182T36BD-167I

Description
SRAM 1.8 or 1.5V 512K x 36 18M
Categorystorage    storage   
File Size468KB,36 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8182T36BD-167I Online Shopping

Suppliers Part Number Price MOQ In stock  
GS8182T36BD-167I - - View Buy Now

GS8182T36BD-167I Overview

SRAM 1.8 or 1.5V 512K x 36 18M

GS8182T36BD-167I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.B
Factory Lead Time8 weeks
Maximum access time0.5 ns
Other featuresPIPELINED ARCHITECTURE, LATE WRITE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width36
Number of functions1
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8182T08/09/18/36BD-400/375/333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR-II™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 36Mb, and 72Mb and
future 144Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
18Mb SigmaDDR-II™
Burst of 2 SRAM
400 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 is used to initialize the pointers that control the data
multiplexer / de-multiplexer so the RAM can perform "critical
word first" operations. From an external address point of view,
regardless of the starting point, the data transfers always follow
the same sequence {0, 1} or {1, 0} (where the digits shown
represent A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B2 RAMs are one address pin less than the advertised index
depth (e.g., the 2M x 8 has a 1M addressable index, and A0 is
not an accessible address pin).
SigmaDDR-II™ Family Overview
The GS8182T08/09/18/36BD are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 18,874,368-bit (18Mb)
SRAMs. The GS8182T08/09/18/36BD SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8182T08/09/18/36BD SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
Parameter Synopsis
-400
tKHKH
tKHQV
2.5 ns
0.45 ns
-375
2.67 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.04c 11/2011
1/36
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号