MCH6306 datasheet, PDF - EEWORLD Datasheet

MCH6306: DescriptionMCH6306; CategoryDiscrete semiconductor The transistor; File Size52KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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MCH6306 Overview

MCH6306

Parameter Name	Attribute value
Maker	SANYO
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.069 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.5 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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