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K4S560832D-TL7C

Description
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Categorystorage    storage   
File Size99KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S560832D-TL7C Overview

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

K4S560832D-TL7C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals54
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.22 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1

K4S560832D-TL7C Related Products

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Description 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Is it lead-free? Contains lead - Contains lead - Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible - incompatible - incompatible incompatible incompatible
Maker SAMSUNG - SAMSUNG - SAMSUNG - SAMSUNG SAMSUNG SAMSUNG
Parts packaging code TSOP2 - TSOP2 - TSOP2 - TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts 54 - 54 - 54 - 54 54 54
Reach Compliance Code compliant - unknow - unknow - unknow unknow compli
ECCN code EAR99 - EAR99 - EAR99 - EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST - FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns - 6 ns - 6 ns - 6 ns 6 ns 5.4 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH - AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz - 100 MHz - 100 MHz - 100 MHz 100 MHz 133 MHz
I/O type COMMON - COMMON - COMMON - COMMON COMMON COMMON
interleaved burst length 1,2,4,8 - 1,2,4,8 - 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 - R-PDSO-G54 - R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609 code e0 - e0 - e0 - e0 e0 e0
length 22.22 mm - 22.22 mm - 22.22 mm - 22.22 mm 22.22 mm 22.22 mm
memory density 268435456 bit - 268435456 bi - 268435456 bi - 268435456 bi 268435456 bi 268435456 bi
Memory IC Type SYNCHRONOUS DRAM - SYNCHRONOUS DRAM - SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 8 - 8 - 8 - 8 8 8
Number of functions 1 - 1 - 1 - 1 1 1
Number of ports 1 - 1 - 1 - 1 1 1
Number of terminals 54 - 54 - 54 - 54 54 54
word count 33554432 words - 33554432 words - 33554432 words - 33554432 words 33554432 words 33554432 words
character code 32000000 - 32000000 - 32000000 - 32000000 32000000 32000000
Operating mode SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C - 70 °C - 70 °C 70 °C 70 °C
organize 32MX8 - 32MX8 - 32MX8 - 32MX8 32MX8 32MX8
Output characteristics 3-STATE - 3-STATE - 3-STATE - 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 - TSOP2 - TSOP2 - TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSOP54,.46,32 - TSOP54,.46,32 - TSOP54,.46,32 - TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 240
power supply 3.3 V - 3.3 V - 3.3 V - 3.3 V 3.3 V 3.3 V
Certification status Not Qualified - Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified
refresh cycle 8192 - 8192 - 8192 - 8192 8192 8192
Maximum seat height 1.2 mm - 1.2 mm - 1.2 mm - 1.2 mm 1.2 mm 1.2 mm
self refresh YES - YES - YES - YES YES YES
Continuous burst length 1,2,4,8,FP - 1,2,4,8,FP - 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A - 0.002 A - 0.002 A - 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.22 mA - 0.19 mA - 0.19 mA - 0.19 mA 0.19 mA 0.22 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V - 3.6 V - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V - 3 V - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V - 3.3 V - 3.3 V 3.3 V 3.3 V
surface mount YES - YES - YES - YES YES YES
technology CMOS - CMOS - CMOS - CMOS CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL - COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING - GULL WING - GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm - 0.8 mm - 0.8 mm - 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL - DUAL - DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm - 10.16 mm - 10.16 mm - 10.16 mm 10.16 mm 10.16 mm

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