K4S560832D-TC7C datasheet, PDF

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K4S560832D-TC7C: Description32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD; Categorystorage storage; File Size99KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S560832D-TC7C Overview

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

K4S560832D-TC7C Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compli
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	268435456 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	240
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.22 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

K4S560832D-TC7C Related Products

	K4S560832D-TC7C	K4S560832D-TL7A	K4S560832D-TL1H	K4S560832D-TL7C	M366S3253DTS	K4S560832D-TL1L	K4S560832D-TC7A	K4S560832D-TC1L	K4S560832D-TC1H
Description	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD	32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Is it lead-free?	Contains lead	-	Contains lead	Contains lead	-	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible	-	incompatible	incompatible
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	-	SAMSUNG	-	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	-	TSOP2	TSOP2	-	TSOP2	-	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	-	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	-	TSOP2, TSOP54,.46,32	-	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	-	54	54	-	54	-	54	54
Reach Compliance Code	compli	-	unknow	compliant	-	unknow	-	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	-	6 ns	5.4 ns	-	6 ns	-	6 ns	6 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	-	100 MHz	133 MHz	-	100 MHz	-	100 MHz	100 MHz
I/O type	COMMON	-	COMMON	COMMON	-	COMMON	-	COMMON	COMMON
interleaved burst length	1,2,4,8	-	1,2,4,8	1,2,4,8	-	1,2,4,8	-	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54	-	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	-	e0	e0	-	e0	-	e0	e0
length	22.22 mm	-	22.22 mm	22.22 mm	-	22.22 mm	-	22.22 mm	22.22 mm
memory density	268435456 bi	-	268435456 bi	268435456 bit	-	268435456 bi	-	268435456 bi	268435456 bi
Memory IC Type	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	8	-	8	8	-	8	-	8	8
Number of functions	1	-	1	1	-	1	-	1	1
Number of ports	1	-	1	1	-	1	-	1	1
Number of terminals	54	-	54	54	-	54	-	54	54
word count	33554432 words	-	33554432 words	33554432 words	-	33554432 words	-	33554432 words	33554432 words
character code	32000000	-	32000000	32000000	-	32000000	-	32000000	32000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	-	70 °C	-	70 °C	70 °C
organize	32MX8	-	32MX8	32MX8	-	32MX8	-	32MX8	32MX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	-	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	-	TSOP2	TSOP2	-	TSOP2	-	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	-	TSOP54,.46,32	TSOP54,.46,32	-	TSOP54,.46,32	-	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	240	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	-	3.3 V	3.3 V	-	3.3 V	-	3.3 V	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	-	8192	-	8192	8192
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	-	1.2 mm	-	1.2 mm	1.2 mm
self refresh	YES	-	YES	YES	-	YES	-	YES	YES
Continuous burst length	1,2,4,8,FP	-	1,2,4,8,FP	1,2,4,8,FP	-	1,2,4,8,FP	-	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	-	0.002 A	0.002 A	-	0.002 A	-	0.002 A	0.002 A
Maximum slew rate	0.22 mA	-	0.19 mA	0.22 mA	-	0.19 mA	-	0.19 mA	0.19 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	-	3.6 V	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	-	3 V	-	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	-	3.3 V	-	3.3 V	3.3 V
surface mount	YES	-	YES	YES	-	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS	-	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING	-	GULL WING	-	GULL WING	GULL WING
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	-	0.8 mm	-	0.8 mm	0.8 mm
Terminal location	DUAL	-	DUAL	DUAL	-	DUAL	-	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	-	10.16 mm	10.16 mm	-	10.16 mm	-	10.16 mm	10.16 mm

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