IRFR9110TR datasheet, PDF - EEWORLD Datasheet

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IRFR9110TR: DescriptionMOSFET P-Chan 100V 3.1 Amp; CategoryDiscrete semiconductor The transistor; File Size790KB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRFR9110TR Overview

MOSFET P-Chan 100V 3.1 Amp

IRFR9110TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	3.1 A
Maximum drain current (ID)	3.1 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

- 100

= - 10 V

8.7

2.2

4.1

Single

DPAK

(TO-252)

FEATURES

1.2

•

IPAK

(TO-251)

Dynamic dV/dt Rating

Repetitive Avalanche Rated

Surface Mount (IRFR9110, SiHFR9110)

Straight Lead (IRFU9110, SiHFU9110)

Available in Tape and Reel

P-Channel

Fast Switching

Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU Series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

D S

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9110-GE3

IRFR9110PbF

SiHFR9110-E3

DPAK (TO-252)

SiHFR9110TRL-GE3

IRFR9110TRLPbF

SiHFR9110TL-E3

DPAK (TO-252)

SiHFR9110TR-GE3

IRFR9110TRPbF

SiHFR9110T-E3

IPAK (TO-251)

SiHFU9110-GE3

IRFU9110PbF

SiHFU9110-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB

Mount)

= 25 °C

dV/dt

, T

stg

for 10 s

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche

Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= - 25 V, starting T

= 25 °C, L = 21 mH, R

= 25

,

= - 3.1 A (see fig. 12).

c. I



- 4.0 A, dI/dt



75 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0168-Rev. D, 04-Feb-13

Document Number: 91279

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

at - 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

- 100

± 20

- 3.1

- 2.0

- 12

0.20

0.020

140

- 3.1

2.5

- 5.5

- 55 to + 150

260

W/°C

V/ns

°C

UNIT

IRFR9110TR Related Products

	IRFR9110TR	IRFR9110TRL	IRFR9110TRRPBF
Description	MOSFET P-Chan 100V 3.1 Amp	MOSFET P-Chan 100V 3.1 Amp	MOSFET 100V 3.1A 25W 1.2ohm @ 10V
Is it Rohs certified?	incompatible	incompatible	conform to
Maker	Vishay	Vishay	Vishay
package instruction	SMALL OUTLINE, R-PSSO-G2	,	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	compliant
Configuration	SINGLE	Single	SINGLE WITH BUILT-IN DIODE
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
surface mount	YES	YES	YES
Base Number Matches	1	1	1
ECCN code	EAR99	-	EAR99
Is Samacsys	N	-	N
Shell connection	DRAIN	-	DRAIN
Minimum drain-source breakdown voltage	100 V	-	100 V
Maximum drain current (Abs) (ID)	3.1 A	3.1 A	-
Maximum drain current (ID)	3.1 A	-	3.1 A
Maximum drain-source on-resistance	1.2 Ω	-	1.2 Ω
JEDEC-95 code	TO-252AA	-	TO-252AA
JESD-30 code	R-PSSO-G2	-	R-PSSO-G2
JESD-609 code	e0	-	e3
Number of components	1	-	1
Number of terminals	2	-	2
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260
Maximum power dissipation(Abs)	25 W	25 W	-
Certification status	Not Qualified	-	Not Qualified
Terminal surface	TIN LEAD	-	MATTE TIN
Terminal form	GULL WING	-	GULL WING
Terminal location	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	30
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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