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IRFR9110TRRPBF

Description
MOSFET 100V 3.1A 25W 1.2ohm @ 10V
CategoryDiscrete semiconductor    The transistor   
File Size790KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRFR9110TRRPBF Overview

MOSFET 100V 3.1A 25W 1.2ohm @ 10V

IRFR9110TRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)140 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)3.1 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
8.7
2.2
4.1
Single
S
DPAK
(TO-252)
D
D
FEATURES
1.2
IPAK
(TO-251)
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9110, SiHFR9110)
Straight Lead (IRFU9110, SiHFU9110)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
S
G
D S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9110-GE3
IRFR9110PbF
SiHFR9110-E3
DPAK (TO-252)
SiHFR9110TRL-GE3
IRFR9110TRLPbF
a
SiHFR9110TL-E3
a
DPAK (TO-252)
SiHFR9110TR-GE3
IRFR9110TRPbF
a
SiHFR9110T-E3
a
IPAK (TO-251)
SiHFU9110-GE3
IRFU9110PbF
SiHFU9110-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 21 mH, R
g
= 25
,
I
AS
= - 3.1 A (see fig. 12).
c. I
SD
- 4.0 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
Document Number: 91279
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 100
± 20
- 3.1
- 2.0
- 12
0.20
0.020
140
- 3.1
2.5
25
2.5
- 5.5
- 55 to + 150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V

IRFR9110TRRPBF Related Products

IRFR9110TRRPBF IRFR9110TRL IRFR9110TR
Description MOSFET 100V 3.1A 25W 1.2ohm @ 10V MOSFET P-Chan 100V 3.1 Amp MOSFET P-Chan 100V 3.1 Amp
Is it Rohs certified? conform to incompatible incompatible
Maker Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PSSO-G2 , SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
surface mount YES YES YES
Base Number Matches 1 1 1
ECCN code EAR99 - EAR99
Is Samacsys N - N
Shell connection DRAIN - DRAIN
Minimum drain-source breakdown voltage 100 V - 100 V
Maximum drain current (ID) 3.1 A - 3.1 A
Maximum drain-source on-resistance 1.2 Ω - 1.2 Ω
JEDEC-95 code TO-252AA - TO-252AA
JESD-30 code R-PSSO-G2 - R-PSSO-G2
JESD-609 code e3 - e0
Number of components 1 - 1
Number of terminals 2 - 2
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED
Certification status Not Qualified - Not Qualified
Terminal surface MATTE TIN - TIN LEAD
Terminal form GULL WING - GULL WING
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature 30 - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Maximum drain current (Abs) (ID) - 3.1 A 3.1 A
Maximum power dissipation(Abs) - 25 W 25 W
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