MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
Power-MOSFET,25V
BSB012NE2LXI
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOS
TM
Power-MOSFET,25V
BSB012NE2LXI
1Description
Features
•OptimizedSyncFETforhighperformanceBuckconverter
•IntegratedmonolithicSchottkylikediode
•Lowprofile(<0.7mm)
•100%avalanchetested
•100%R
G
Tested
•Double-sidedcooling
•CompatiblewithDirectFET®packageMXfootprintandoutline
1)
•QualifiedaccordingtoJEDEC
2)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
CanPAKM-size
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
g
(0V..10V)
Value
25
1.2
170
39
62
Unit
Drain
Gate
Source
mΩ
A
nC
nC
Type/OrderingCode
BSB012NE2LXI
Package
MG-WDSON-2
Marking
05E2
RelatedLinks
-
CanPAK
TM
uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2)
J-STD20 and JESD22
1)
Final Data Sheet
2
Rev.2.1,2015-09-09
Drain
V
OptiMOS
TM
Power-MOSFET,25V
BSB012NE2LXI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.1,2015-09-09
OptiMOS
TM
Power-MOSFET,25V
BSB012NE2LXI
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-20
-
-
-40
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
170
107
37
400
40
130
20
57
2.8
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=45K/W
1)
T
C
=25°C
T
C
=25°C
I
D
=40A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=45K/W
IEC climatic category;
DIN IEC 68-1: 40/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.0
-
-
Max.
-
2.2
45
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.1,2015-09-09
OptiMOS
TM
Power-MOSFET,25V
BSB012NE2LXI
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current,
T
j
=25°C
Zero gate voltage drain current,
T
j
=125°C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
Values
Min.
25
Typ.
-
15
-
25
4
10
1.3
1.0
0.6
190
Max.
-
-
2
500
-
100
1.6
1.2
1.2
-
Unit
V
Note/TestCondition
V
GS
=0V,I
D
=10mA
dV
(BR)DSS
/dT
j
-
V
GS(th)
I
DSS
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
1.2
-
-
-
-
-
0.3
95
mV/K
I
D
=10mA,referencedto25°C
V
µA
mA
nA
mΩ
Ω
S
V
DS
=V
GS
,I
D
=250µA
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
V
GS
=20V,V
DS
=0V
V
GS
=4.5V,I
D
=30A
V
GS
=10V,I
D
=30A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
4400
1900
190
5.4
6.4
32
4.8
Max.
5900
2600
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
Final Data Sheet
5
Rev.2.1,2015-09-09
Microchip MCU
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