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FP50R12KT4B11

Description
IGBT Modules
Categorysemiconductor    Discrete semiconductor   
File Size768KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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FP50R12KT4B11 Overview

IGBT Modules

FP50R12KT4B11 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryIGBT Modules
ProductIGBT Silicon Modules
ConfigurationArray 7
Collector- Emitter Voltage VCEO Max1200 V
Continuous Collector Current at 25 C50 A
Package / CaseEcono 2
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Height17 mm
Length107.5 mm
Width45 mm
Mounting StyleScrew
Maximum Gate Emitter Voltage+/- 20 V
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP50R12KT4_B11
EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundPressFIT/NTC
EconoPIM™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandPressFIT/NTC
V
CES
= 1200V
I
C nom
= 50A / I
CRM
= 100A
TypischeAnwendungen
• Hilfsumrichter
• Motorantriebe
• Servoumrichter
ElektrischeEigenschaften
• NiedrigeSchaltverluste
• T
vjop
=150°C
• V
CEsat
mitpositivemTemperaturkoeffizienten
• NiedrigesV
CEsat
MechanischeEigenschaften
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• IntegrierterNTCTemperaturSensor
• Kupferbodenplatte
• PressFITVerbindungstechnik
• Standardgehäuse
TypicalApplications
• AuxiliaryInverters
• MotorDrives
• ServoDrives
ElectricalFeatures
• LowSwitchingLosses
• T
vjop
=150°C
• V
CEsat
withpositiveTemperatureCoefficient
• LowV
CEsat
MechanicalFeatures
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• IntegratedNTCtemperaturesensor
• CopperBasePlate
• PressFITContactTechnology
• StandardHousing
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-10-16
revision:3.0
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:AS
approvedby:RS

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