IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
OptiMOS
®
-P2
Power-Transistor
Product Summary
V
DS
R
DS(on)
(SMD Version)
I
D
-30
6.9
-80
V
mΩ
A
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80P03P4L-07
IPI80P03P4L-07
IPP80P03P4L-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P03L07
4P03L07
4P03L07
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=-10V
1)
T
C
=100°C,
V
GS
=-10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25°C
I
D
=-40A
-
-
T
C
=25 °C
-
-
Value
Unit
A
-80
-65
-320
135
-80
+5/-16
88
-55 ... +175
55/175/56
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-07-29
IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= -1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=-130µA
V
DS
=-24V,
V
GS
=0V,
T
j
=25°C
V
DS
=-24V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-16V,
V
DS
=0V
V
GS
=-4.5V,
I
D
=-40A
V
GS
=-4.5V,
I
D
=-40A,
SMD version
V
GS
=-10V,
I
D
=-80A
V
GS
=-10V,
I
D
=-80A,
SMD version
-30
-1.0
-
-
-1.5
-0.03
-
-2.0
-1
µA
V
-
-
-
-
-
-
-
-
1.7
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
-
-
-10
-
8.3
8.0
5.9
5.6
-100
-100
12.3
12
7.2
6.9
nA
mΩ
Rev. 1.0
page 2
2008-07-29
IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10V,
I
D
=-80A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=-25V,
f
=1MHz
-
-
-
-
-
-
-
4400
1220
30
8
4
15
60
5700
1600
60
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-24V,
I
D
=-80A,
V
GS
=0 to -10V
-
-
-
-
16
8
63
-3.7
20
16
80
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25°C
V
GS
=0V,
I
F
=-80A,
T
j
=25°C
V
R
=-15V,
I
F
=-80A,
di
F
/dt =-100A/µs
-
-
-
-
-
-
-
-
50
40
-80
-320
-1.3
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 1.7K/W the chip is able to carry 92A at 25°C.
Defined by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2008-07-29
IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≤
-6V
2 Drain current
I
D
= f(T
C
);
V
GS
≤
-6V; SMD
100
100
80
80
60
60
P
tot
[W]
40
-I
D
[A]
40
20
20
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
0
0.5
100
100 µs
Z
thJC
[K/W]
-I
D
[A]
1 ms
0.1
10
-1
0.05
0.01
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
-V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2008-07-29
IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
320
10V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
20
-4V
-4.5V
-5V
5V
17
240
-I
D
[A]
4.5V
160
R
DS(on)
[mΩ]
14
11
4V
80
3.5V
8
3V
-10V
0
0
1
2
3
4
5
6
5
0
80
160
240
320
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= -6V
parameter:
T
j
320
-55 °C
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= -80 A;
V
GS
= -10 V; SMD
9
8
240
175 °C
R
DS(on)
[m
Ω
]
7
-I
D
[A]
160
6
80
5
0
1
2
3
4
5
6
4
-60
-20
20
60
100
140
180
-V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2008-07-29
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