BAS40 / -04 / -05 / -06
Taiwan Semiconductor
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
●
●
●
●
Designed for mounting on small surface
Low Capacitance
Low forward voltage drop
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
=40mA
T
J
Max.
Package
VALUE
200
40
0.6
1
125
SOT-23
UNIT
mA
V
A
V
°C
APPLICATIONS
●
●
●
●
Adapters
For switching power supply
Low stored charge
Inverter
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward surge
current @ t = 8.3ms
Junction temperature range
Storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
BAS40
43
BAS40- BAS40-
04
44
40
200
0.6
-65 to +125
-65 to +125
05
45
BAS40-
06
46
V
mA
A
°C
°C
UNIT
1
Version:G1702
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
357
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 1mA, T
J
= 25°C
I
F
= 40mA, T
J
= 25°C
V
R
=30V T
J
= 25°C
I
R
=10μA
1 MHz, V
R
=1V
I
F
=I
R
=10mA, R
L
=100ῼ,
I
RR
=1mA
SYMBOL
V
F
I
R
V
(BR)
C
J
t
rr
MIN
-
-
40
-
-
MAX
0.38
1.00
0.2
-
5.0
5.0
UNIT
V
μA
V
pF
ns
Reverse current @ rated V
R
per
diode
(2)
Reverse Breakdown Voltage
Junction capacitance
Reverse Recovery Time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
BAS40-XX
(Note 1)
PACKING
CODE
RF
PACKING CODE
SUFFIX(*)
G
PACKAGE
SOT-23
PACKING
3K / 7" Reel
Notes:
1. “XX” is Device code from “04” to ”06”.
*: optional available
EXAMPLE
EXAMPLE P/N
BAS40-04 RFG
PART NO.
BAS40-04
PACKING CODE
RF
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:G1702
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Power Derating Curve
Fig.2 Maximum Non-Repetitve Peak Forward
Surge Current Per Leg
P
D
, Power Dissipation (mW)
200
Peak Forward Surge Current (mA)
600
8.3 ms single half sine wave
100
300
0
0
25
50
75
100
125
0
1
10
Numbers of Cycles at 60 Hz
100
T
A
- Ambient Temperature (
o
C)
Fig.3 Typical Forward Characteristics
1
I
R
- Instantaneous Reverse Current (mA)
Instantaneous Forward Current (mA)
10000
Fig.4 Typical Reverse Characteristics
T
A
=125
°C
1000
T
A
=70
°C
100
T
A
=25
°C
T
A
=0
°C
1
T
A
= -40
°C
0.1
0.01
T
A
= -40
°C
T
A
= 0
°C
T
A
= 25
°C
T
A
=70
°C
T
A
= 125
°C
10
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0
10
20
30
40
V
F
, Instantaneous Forward Voltage (mV)
V
R
- Reverse Voltage (V)
3
Version:G1702
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 5 Typical Total Capacitance VS.
Reverse Voltage
100
Transient Thermal Impedance (
o
C/W)
4
Junction Capacitance (pF)
f=1.0MHz
Fig.6 Typical Transient Thermal
Characteristics
10
2
1
0
0
5
10
Reverse Voltage (V)
15
20
0.1
0.01
0.10
1.00
10.00
100.00
Pulse Duration (sec)
4
Version:G1702
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
SOT-23
DIM.
A
B
C
D
E
F
G
H
Unit(mm)
Min
2.70
1.10
0.30
1.78
2.10
0.89
Max
3.10
1.50
0.51
2.04
2.64
1.30
Unit(inch)
Min
0.106
0.043
0.012
0.070
0.083
0.035
Max
0.122
0.059
0.020
0.080
0.104
0.051
0.55 REF
0.10 REF
0.022 REF
0.004 REF
SUGGEST PAD LAYOUT
DIM.
Z
X
Y
C
E
Unit(mm)
TYP
2.8
0.7
0.9
1.9
1.0
Unit(inch)
TYP
0.11
0.03
0.04
0.07
0.04
PIN CONFIGURATION
5
Version:G1702
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