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IPW60R330P6FKSA1

Description
MOSFET LOW POWER_LEGACY
Categorysemiconductor    Discrete semiconductor   
File Size3MB,19 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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MOSFET LOW POWER_LEGACY

IPW60R330P6FKSA1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance297 mOhms
Vgs th - Gate-Source Threshold Voltage3.5 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation93 W
Channel ModeEnhancement
PackagingTube
Height21.1 mm
Length16.13 mm
Transistor Type1 N-Channel
Width5.21 mm
Fall Time7 ns
Rise Time7 ns
Factory Pack Quantity240
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time12 ns
Unit Weight1.340411 oz

IPW60R330P6FKSA1 Related Products

IPW60R330P6FKSA1 IPP60R330P6XKSA1 IPW60R330P6
Description MOSFET LOW POWER_LEGACY MOSFET LOW POWER_LEGACY MOSFET LOW POWER_LEGACY
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer Infineon Infineon Infineon
Product Category MOSFET MOSFET MOSFET
RoHS Details Details Details
Technology Si Si Si
Mounting Style Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-220-3 TO-247-3
Number of Channels 1 Channel 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 600 V 600 V 600 V
Id - Continuous Drain Current 12 A 12 A 12 A
Rds On - Drain-Source Resistance 297 mOhms 297 mOhms 297 mOhms
Vgs th - Gate-Source Threshold Voltage 3.5 V 3.5 V 3.5 V
Vgs - Gate-Source Voltage 20 V 20 V 20 V
Qg - Gate Charge 22 nC 22 nC 22 nC
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C
Configuration Single Single Single
Pd - Power Dissipation 93 W 93 W 93 W
Channel Mode Enhancement Enhancement Enhancement
Packaging Tube Tube Tube
Height 21.1 mm 15.65 mm 21.1 mm
Length 16.13 mm 10 mm 16.13 mm
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel
Width 5.21 mm 4.4 mm 5.21 mm
Fall Time 7 ns 7 ns 7 ns
Rise Time 7 ns 7 ns 7 ns
Factory Pack Quantity 240 500 240
Typical Turn-Off Delay Time 33 ns 33 ns 33 ns
Typical Turn-On Delay Time 12 ns 12 ns 12 ns
Unit Weight 1.340411 oz 0.211644 oz 1.340411 oz
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