MOSFET LOW POWER_LEGACY
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Infineon |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-247-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 12 A |
Rds On - Drain-Source Resistance | 297 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 22 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 93 W |
Channel Mode | Enhancement |
Packaging | Tube |
Height | 21.1 mm |
Length | 16.13 mm |
Transistor Type | 1 N-Channel |
Width | 5.21 mm |
Fall Time | 7 ns |
Rise Time | 7 ns |
Factory Pack Quantity | 240 |
Typical Turn-Off Delay Time | 33 ns |
Typical Turn-On Delay Time | 12 ns |
Unit Weight | 1.340411 oz |
IPW60R330P6FKSA1 | IPP60R330P6XKSA1 | IPW60R330P6 | |
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Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY |
Product Attribute | Attribute Value | Attribute Value | Attribute Value |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Details | Details | Details |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-220-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id - Continuous Drain Current | 12 A | 12 A | 12 A |
Rds On - Drain-Source Resistance | 297 mOhms | 297 mOhms | 297 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.5 V | 3.5 V | 3.5 V |
Vgs - Gate-Source Voltage | 20 V | 20 V | 20 V |
Qg - Gate Charge | 22 nC | 22 nC | 22 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | Single |
Pd - Power Dissipation | 93 W | 93 W | 93 W |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 15.65 mm | 21.1 mm |
Length | 16.13 mm | 10 mm | 16.13 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.21 mm | 4.4 mm | 5.21 mm |
Fall Time | 7 ns | 7 ns | 7 ns |
Rise Time | 7 ns | 7 ns | 7 ns |
Factory Pack Quantity | 240 | 500 | 240 |
Typical Turn-Off Delay Time | 33 ns | 33 ns | 33 ns |
Typical Turn-On Delay Time | 12 ns | 12 ns | 12 ns |
Unit Weight | 1.340411 oz | 0.211644 oz | 1.340411 oz |