IPP60R330P6XKSA1 datasheet, PDF

IPP60R330P6XKSA1: DescriptionMOSFET LOW POWER_LEGACY; Categorysemiconductor Discrete semiconductor; File Size3MB，19 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET LOW POWER_LEGACY

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	12 A
Rds On - Drain-Source Resistance	297 mOhms
Vgs th - Gate-Source Threshold Voltage	3.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	22 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Qualification	AEC-Q100
Channel Mode	Enhancement
Packaging	Tube
Height	15.65 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	4.4 mm
Fall Time	7 ns
Pd - Power Dissipation	93 W
Rise Time	7 ns
Factory Pack Quantity	500
Typical Turn-Off Delay Time	33 ns
Typical Turn-On Delay Time	12 ns
Unit Weight	0.211644 oz

	IPP60R330P6XKSA1	IPW60R330P6	IPW60R330P6FKSA1
Description	MOSFET LOW POWER_LEGACY	MOSFET LOW POWER_LEGACY	MOSFET LOW POWER_LEGACY
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Details	Details	Details
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-247-3	TO-247-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V	600 V	600 V
Id - Continuous Drain Current	12 A	12 A	12 A
Rds On - Drain-Source Resistance	297 mOhms	297 mOhms	297 mOhms
Vgs th - Gate-Source Threshold Voltage	3.5 V	3.5 V	3.5 V
Vgs - Gate-Source Voltage	20 V	20 V	20 V
Qg - Gate Charge	22 nC	22 nC	22 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Height	15.65 mm	21.1 mm	21.1 mm
Length	10 mm	16.13 mm	16.13 mm
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	4.4 mm	5.21 mm	5.21 mm
Fall Time	7 ns	7 ns	7 ns
Pd - Power Dissipation	93 W	93 W	93 W
Rise Time	7 ns	7 ns	7 ns
Factory Pack Quantity	500	240	240
Typical Turn-Off Delay Time	33 ns	33 ns	33 ns
Typical Turn-On Delay Time	12 ns	12 ns	12 ns
Unit Weight	0.211644 oz	1.340411 oz	1.340411 oz

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